Semiconductivity Transition in Silicon Nanowires by Hole Transport Layer

Awad Shalabny, Francesco Buonocore, Massimo Celino, Gil Shalev, Lu Zhang, Weiwei Wu, Peixian Li, Jordi Arbiol, Muhammad Y. Bashouti

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The surface of nanowires is a source of interest mainly for electrical prospects. Thus, different surface chemical treatments were carried out to develop recipes to control the surface effect. In this work, we succeed in shifting and tuning the semiconductivity of a Si nanowire-based device from n- to p-type. This was accomplished by generating a hole transport layer at the surface by using an electrochemical reaction-based nonequilibrium position to enhance the impact of the surface charge transfer. This was completed by applying different annealing pulses at low temperature (below 400 °C) to reserve the hydrogen bonds at the surface. After each annealing pulse, the surface was characterized by XPS, Kelvin probe measurements, and conductivity measured by FET based on a single Si NW. The mechanism and conclusion were supported experimentally and theoretically. To this end, this strategy has been demonstrated as an essential tool which could pave a new road for regulating semiconductivity and for other low-dimensional nanomaterials.

Original languageEnglish
Pages (from-to)8369-8374
Number of pages6
JournalNano Letters
Volume20
Issue number11
DOIs
StatePublished - 11 Nov 2020

Keywords

  • Enhanced surface reaction
  • Hole transport layer
  • Semiconductivity transition
  • Silicon nanowire
  • Surface doping

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry (all)
  • Materials Science (all)
  • Condensed Matter Physics
  • Mechanical Engineering

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