Abstract
Changes in surface and bulk properties of United Detector Technology pin-05D photodiodes as a result of 1. 3 Mrad gamma irradiation are compared. Changes in surface properties are seen experimentally to significantly alter overall device characteristics. Changes in device properties include increases in surface conductivity, improved quantum efficiency at visible wavelengths, decreased infrared response, and decreased minority carrier lifetime. The first four results are new and permit differentiation between surface and bulk effects. A model consistent with all of these measurements is presented to explain the changes. The model is based upon gamma ray photodesorption of surface impurities.
| Original language | English |
|---|---|
| Pages (from-to) | 959-962 |
| Number of pages | 4 |
| Journal | Optical Engineering |
| Volume | 26 |
| Issue number | 9 |
| State | Published - 1 Sep 1987 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- General Engineering