Short wavelength responsivity improvement and long wavelength responsivity degradation in photodiodes as a result of gamma irradiation

N. S. Kopeika; S. Hava; O. Meroham

doi:10.1117/12.950679

Short wavelength responsivity improvement and long wavelength responsivity degradation in photodiodes as a result of gamma irradiation

N. S. Kopeika, S. Hava, O. Meroham

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Changes in surface and bulk properties of UDT-05D photodiodes as a result of 1.3 Mrad γ-irradiation are compared. As suspected by previous investiagors but not verified until now, changes in surface properties are seen experimentally to alter significantly overall device characteristics. Changes in device properties include.increases in surface conductivity, improved quantum efficiency at visible wavelengths, decreased dark current at very low reverse bias, decreased infrared response, decreased minority carrier lifetime, and decreased η. The first three results are new and permit differentiation between surface and bulk effects. A model consistent with all these measurements to explain the changes is presented. The model is based upon γ-ray photodesorption of surface impurities.

Original language	English
Pages (from-to)	104-108
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	572
DOIs	https://doi.org/10.1117/12.950679
State	Published - 23 Dec 1985

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Short wavelength responsivity improvement and long wavelength responsivity degradation in photodiodes as a result of gamma irradiation",

abstract = "Changes in surface and bulk properties of UDT-05D photodiodes as a result of 1.3 Mrad γ-irradiation are compared. As suspected by previous investiagors but not verified until now, changes in surface properties are seen experimentally to alter significantly overall device characteristics. Changes in device properties include.increases in surface conductivity, improved quantum efficiency at visible wavelengths, decreased dark current at very low reverse bias, decreased infrared response, decreased minority carrier lifetime, and decreased η. The first three results are new and permit differentiation between surface and bulk effects. A model consistent with all these measurements to explain the changes is presented. The model is based upon γ-ray photodesorption of surface impurities.",

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T1 - Short wavelength responsivity improvement and long wavelength responsivity degradation in photodiodes as a result of gamma irradiation

AU - Kopeika, N. S.

AU - Hava, S.

AU - Meroham, O.

PY - 1985/12/23

Y1 - 1985/12/23

N2 - Changes in surface and bulk properties of UDT-05D photodiodes as a result of 1.3 Mrad γ-irradiation are compared. As suspected by previous investiagors but not verified until now, changes in surface properties are seen experimentally to alter significantly overall device characteristics. Changes in device properties include.increases in surface conductivity, improved quantum efficiency at visible wavelengths, decreased dark current at very low reverse bias, decreased infrared response, decreased minority carrier lifetime, and decreased η. The first three results are new and permit differentiation between surface and bulk effects. A model consistent with all these measurements to explain the changes is presented. The model is based upon γ-ray photodesorption of surface impurities.

AB - Changes in surface and bulk properties of UDT-05D photodiodes as a result of 1.3 Mrad γ-irradiation are compared. As suspected by previous investiagors but not verified until now, changes in surface properties are seen experimentally to alter significantly overall device characteristics. Changes in device properties include.increases in surface conductivity, improved quantum efficiency at visible wavelengths, decreased dark current at very low reverse bias, decreased infrared response, decreased minority carrier lifetime, and decreased η. The first three results are new and permit differentiation between surface and bulk effects. A model consistent with all these measurements to explain the changes is presented. The model is based upon γ-ray photodesorption of surface impurities.

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AN - SCOPUS:0022282364

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Short wavelength responsivity improvement and long wavelength responsivity degradation in photodiodes as a result of gamma irradiation

Abstract

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