Si light-emitting device in integrated photonic CMOS ICs

Kaikai Xu, Lukas W. Snyman, Herzl Aharoni

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4–2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

Original languageEnglish
Pages (from-to)274-282
Number of pages9
JournalOptical Materials
Volume69
DOIs
StatePublished - 1 Jul 2017

Keywords

  • CMOS
  • Light-emitting device
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Computer Science (all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

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