Silicon carbide bonding for high temperatures resistant joints

A. Stern, R. Aroshas, I. Rosenthal, Z. Shmul, S. Kalabukhov, M. P. Dariel, N. Frage

Research output: Contribution to journalArticlepeer-review

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This article is intended to present a follow-up research to joining development for silicon carbide (SiC)-based materials used for structural applications in harsh environments. The paper reports results of our continuous study on SiC bonding by the Spark Plasma Sintering (SPS) Technique. SiC pipe, disk couples and combination of pipe-disk couples were bonded by the SPS method. In addition, the samples were analyzed non-destructively by scanning acoustic microscopy (SAM) and then by light and electron microscopy, while the mechanical properties were measured by the nanoindentation method. High quality bonding was observed, with existence of only a few defects at the interface periphery. SPS proved efficient for bonding different shaped SiC parts, however, an adjustment of bonding parameters due to geometry must be taken into consideration.

Original languageEnglish
Pages (from-to)15-22
Number of pages8
JournalAnnals of "Dunarea de Jos" University of Galati, Fascicle XII, Welding Equipment and Technology
StatePublished - 1 Jan 2013


  • Elastic modulus
  • Fracture toughness
  • Hardness
  • Nanoindentation
  • Scanning acoustic microscope
  • Silicon carbide
  • Spark plasma sintering


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