Silicon films deposited from SiCl₄ by an r.f. cold plasma technique: X-ray photoelectron spectroscopy and electrical conductivity studies

Keyphrases

• Electrical Conductivity 100%
• X-ray Photoelectron Spectroscopy 100%
• SiCl4 100%
• Plasma Technique 100%
• Cold Plasma 100%
• Silicon Film 100%
• Conductivity Studies 100%
• Undoped 66%
• Microcrystalline Structure 66%
• Spectroscopic Measurement 33%
• Silicon Substrate 33%
• Chemical Shift 33%
• Deposition Process 33%
• Chlorine 33%
• Glow Discharge 33%
• Chlorine Content 33%
• Chemical Characteristics 33%
• Fermi Level 33%
• Substrate Interface 33%
• Surface Zone 33%
• Initial Deposition 33%
• Electrical Characteristics 33%
• Compositional Variation 33%
• Si 2p 33%
• Dark Conductivity 33%
• Conductivity Measurement 33%
• Electrical Conductivity Measurement 33%
• Doped Films 33%
• B2H6 33%
• Silicon Oxidation 33%
• Stainless Steel Substrate 33%
• P-type Dopant 33%
• Microcrystalline Silicon Film 33%

Engineering

• Film Silicon 100%
• Deposited Film 100%
• Ray Photoelectron Spectroscopy 100%
• Electrical Conductivity 100%
• Microcrystalline 66%
• Conductivity Measurement 66%
• Silicon Substrate 33%
• Stainless Steel 33%
• Deposition Process 33%
• Glow Discharge 33%
• Substrate Interface 33%
• Dopants 33%
• Surface Region 33%
• Fermi Level 33%
• Microcrystalline Silicon 33%

Material Science

• Film 100%
• Silicon 100%
• X-Ray Photoelectron Spectroscopy 100%
• Electrical Conductivity 100%
• Oxidation Reaction 20%
• Chemical Property 20%
• Stainless Steel 20%
• Doping (Additives) 20%
• Electrical Property 20%
• Microcrystalline Silicon 20%