Silicon films deposited from SiCl₄ by an r.f. cold plasma technique: X-ray photoelectron spectroscopy and electrical conductivity studies

Engineering & Materials Science

• Air 9%
• Chemical shift 29%
• Chlorine 42%
• Doping (additives) 19%
• Electric Conductivity 77%
• Fermi level 29%
• Glow discharges 25%
• Microcrystalline silicon 32%
• Oxidation 15%
• Plasmas 63%
• Silicon 54%
• Stainless steel 15%
• Substrates 24%
• X ray photoelectron spectroscopy 84%

Physics & Astronomy

• air 13%
• chemical equilibrium 24%
• chlorine 48%
• cold plasmas 76%
• conductivity 30%
• electrical resistivity 43%
• glow discharges 23%
• oxidation 16%
• photoelectron spectroscopy 56%
• shift 13%
• silicon 24%
• silicon films 73%
• stainless steels 20%
• x rays 31%

Chemical Compounds

• Chemical Shift 13%
• Chlorine 30%
• Cold Plasma 100%
• Conductivity 23%
• Deposition Process 18%
• Displacement 14%
• Doping Material 15%
• Electrical Conductivity 53%
• Fermi Level 20%
• Glow Discharge 20%
• Liquid Film 33%
• Microcrystallinity 56%
• Oxidation Reaction 7%
• Surface 5%
• X-Ray Photoelectron Spectroscopy 48%