Silicon light-emitting device for fast optical interconnect and fast sensing applications in the GHz frequency range in standard IC technology

Xu Kaikai; Kingsley A. Ogudo; Lukas W. Snyman; Herzl Aharoni

Silicon light-emitting device for fast optical interconnect and fast sensing applications in the GHz frequency range in standard IC technology

Xu Kaikai, Kingsley A. Ogudo, Lukas W. Snyman, Herzl Aharoni

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A monolithically integrated silicon light-emitting device with visible light emission (400-900 nm) is presented to realize sensing application in high frequency on the CMOS platform.

Original language	English
Pages (from-to)	164-166
Number of pages	3
Journal	Optoelectronics and Advanced Materials, Rapid Communications
Volume	11
Issue number	3-4
State	Published - 1 Mar 2017

Keywords

Frequency
Interconnect
Optoelectronics
Silicon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{3f0711e8541a4b4da9b285afdb915da4,

title = "Silicon light-emitting device for fast optical interconnect and fast sensing applications in the GHz frequency range in standard IC technology",

abstract = "A monolithically integrated silicon light-emitting device with visible light emission (400-900 nm) is presented to realize sensing application in high frequency on the CMOS platform.",

keywords = "Frequency, Interconnect, Optoelectronics, Silicon",

author = "Xu Kaikai and Ogudo, {Kingsley A.} and Snyman, {Lukas W.} and Herzl Aharoni",

year = "2017",

month = mar,

day = "1",

language = "English",

volume = "11",

pages = "164--166",

journal = "Optoelectronics and Advanced Materials, Rapid Communications",

issn = "1842-6573",

publisher = "National Institute of Optoelectronics",

number = "3-4",

}

Silicon light-emitting device for fast optical interconnect and fast sensing applications in the GHz frequency range in standard IC technology. / Kaikai, Xu; Ogudo, Kingsley A.; Snyman, Lukas W. et al.
In: Optoelectronics and Advanced Materials, Rapid Communications, Vol. 11, No. 3-4, 01.03.2017, p. 164-166.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Silicon light-emitting device for fast optical interconnect and fast sensing applications in the GHz frequency range in standard IC technology

AU - Kaikai, Xu

AU - Ogudo, Kingsley A.

AU - Snyman, Lukas W.

AU - Aharoni, Herzl

PY - 2017/3/1

Y1 - 2017/3/1

N2 - A monolithically integrated silicon light-emitting device with visible light emission (400-900 nm) is presented to realize sensing application in high frequency on the CMOS platform.

AB - A monolithically integrated silicon light-emitting device with visible light emission (400-900 nm) is presented to realize sensing application in high frequency on the CMOS platform.

KW - Frequency

KW - Interconnect

KW - Optoelectronics

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=85020040667&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:85020040667

SN - 1842-6573

VL - 11

SP - 164

EP - 166

JO - Optoelectronics and Advanced Materials, Rapid Communications

JF - Optoelectronics and Advanced Materials, Rapid Communications

IS - 3-4

ER -

Silicon light-emitting device for fast optical interconnect and fast sensing applications in the GHz frequency range in standard IC technology

Abstract

Keywords

ASJC Scopus subject areas

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