@article{3f0711e8541a4b4da9b285afdb915da4,
title = "Silicon light-emitting device for fast optical interconnect and fast sensing applications in the GHz frequency range in standard IC technology",
abstract = "A monolithically integrated silicon light-emitting device with visible light emission (400-900 nm) is presented to realize sensing application in high frequency on the CMOS platform.",
keywords = "Frequency, Interconnect, Optoelectronics, Silicon",
author = "Xu Kaikai and Ogudo, {Kingsley A.} and Snyman, {Lukas W.} and Herzl Aharoni",
note = "Funding Information: This work is supported by the Natural Science Foundation of China under Contract 61674001, the National Research Foundation Rated Researcher Incentive Funding under Contract IFR2011033100025, Department of Science and Technolo gy of Sichuan Province under Contract 2016JY0217, the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices under Contract KFJJ201508, and the Open Foundation of Defense Key Disciplines Lab of Novel Micro-nano Devices and System Technology (Chongqing University). Publisher Copyright: {\textcopyright} 2017, National Institute of Optoelectronics. All rights reserved.",
year = "2017",
month = mar,
day = "1",
language = "English",
volume = "11",
pages = "164--166",
journal = "Optoelectronics and Advanced Materials, Rapid Communications",
issn = "1842-6573",
publisher = "National Institute of Optoelectronics",
number = "3-4",
}