A monolithically integrated silicon light-emitting device with visible light emission (400-900 nm) is presented to realize sensing application in high frequency on the CMOS platform.
|Number of pages||3|
|Journal||Optoelectronics and Advanced Materials, Rapid Communications|
|State||Published - 1 Mar 2017|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering