Silicon light emitting devices in standard CMOS technology

Monuko Du Plessis; Herzl Aharoni; Lukas W. Snyman

Silicon light emitting devices in standard CMOS technology

Monuko Du Plessis, Herzl Aharoni, Lukas W. Snyman

Research output: Contribution to conference › Paper › peer-review

16 Scopus citations

Abstract

Photon emission from reverse biased silicon pn junctions was reported for the first time in 1955. However, Si-LED's will only find applications if they can be fully integrated with standard silicon integrated circuits, and several attempts have been made in this regard. This paper discusses the characteristics and design of silicon light emitting devices in standard CMOS technology with no process modifications.

Original language	English
Pages	231-238
Number of pages	8
State	Published - 1 Dec 2001
Externally published	Yes
Event	2001 International Semiconductor Conference - Siaia, Romania Duration: 9 Oct 2002 → 13 Oct 2002

Conference

Conference	2001 International Semiconductor Conference
Country/Territory	Romania
City	Siaia
Period	9/10/02 → 13/10/02

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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title = "Silicon light emitting devices in standard CMOS technology",

abstract = "Photon emission from reverse biased silicon pn junctions was reported for the first time in 1955. However, Si-LED's will only find applications if they can be fully integrated with standard silicon integrated circuits, and several attempts have been made in this regard. This paper discusses the characteristics and design of silicon light emitting devices in standard CMOS technology with no process modifications.",

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T1 - Silicon light emitting devices in standard CMOS technology

AU - Du Plessis, Monuko

AU - Aharoni, Herzl

AU - Snyman, Lukas W.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Photon emission from reverse biased silicon pn junctions was reported for the first time in 1955. However, Si-LED's will only find applications if they can be fully integrated with standard silicon integrated circuits, and several attempts have been made in this regard. This paper discusses the characteristics and design of silicon light emitting devices in standard CMOS technology with no process modifications.

AB - Photon emission from reverse biased silicon pn junctions was reported for the first time in 1955. However, Si-LED's will only find applications if they can be fully integrated with standard silicon integrated circuits, and several attempts have been made in this regard. This paper discusses the characteristics and design of silicon light emitting devices in standard CMOS technology with no process modifications.

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M3 - Paper

AN - SCOPUS:0035744005

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T2 - 2001 International Semiconductor Conference

Y2 - 9 October 2002 through 13 October 2002

ER -

Silicon light emitting devices in standard CMOS technology

Abstract

Conference

ASJC Scopus subject areas

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