Photon emission from reverse biased silicon pn junctions was reported for the first time in 1955. However, Si-LED's will only find applications if they can be fully integrated with standard silicon integrated circuits, and several attempts have been made in this regard. This paper discusses the characteristics and design of silicon light emitting devices in standard CMOS technology with no process modifications.
|Number of pages||8|
|State||Published - 1 Dec 2001|
|Event||2001 International Semiconductor Conference - Siaia, Romania|
Duration: 9 Oct 2002 → 13 Oct 2002
|Conference||2001 International Semiconductor Conference|
|Period||9/10/02 → 13/10/02|