Silicon light emitting devices in standard CMOS technology

Monuko Du Plessis, Herzl Aharoni, Lukas W. Snyman

Research output: Contribution to conferencePaperpeer-review

16 Scopus citations

Abstract

Photon emission from reverse biased silicon pn junctions was reported for the first time in 1955. However, Si-LED's will only find applications if they can be fully integrated with standard silicon integrated circuits, and several attempts have been made in this regard. This paper discusses the characteristics and design of silicon light emitting devices in standard CMOS technology with no process modifications.

Original languageEnglish
Pages231-238
Number of pages8
StatePublished - 1 Dec 2001
Externally publishedYes
Event2001 International Semiconductor Conference - Siaia, Romania
Duration: 9 Oct 200213 Oct 2002

Conference

Conference2001 International Semiconductor Conference
Country/TerritoryRomania
CitySiaia
Period9/10/0213/10/02

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