Silicon nanowires terminated with methyl functionalities exhibit stronger Si-C bonds than equivalent 2D surfaces

Muhammad Y. Bashouti; Yair Paska; Sreenivasa Reddy Puniredd; Thomas Stelzner; Silke Christiansen; Hossam Haick

doi:10.1039/b820559k

Silicon nanowires terminated with methyl functionalities exhibit stronger Si-C bonds than equivalent 2D surfaces

Muhammad Y. Bashouti, Yair Paska, Sreenivasa Reddy Puniredd, Thomas Stelzner, Silke Christiansen, Hossam Haick

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

Silicon nanowires (Si NWs) terminated with methyl functionalities exhibit higher oxidation resistance under ambient conditions than equivalent 2D Si(100) and 2D Si(111) surfaces having similar or 10-20% higher initial coverage. The kinetics of methyl adsorption as well as complementary surface analysis by XPS and ToF SIMS attribute this difference to the formation of stronger Si-C bonds on Si NWs, as compared to 2D Si surfaces. This finding offers the possibility of functionalising Si NWs with minimum effect on the conductance of the near-gap channels leading towards more efficient Si NW electronic devices.

Original language	English
Pages (from-to)	3845-3848
Number of pages	4
Journal	Physical Chemistry Chemical Physics
Volume	11
Issue number	20
DOIs	https://doi.org/10.1039/b820559k
State	Published - 25 May 2009
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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@article{5cc27db767bc4cfb913e786a390f442a,

title = "Silicon nanowires terminated with methyl functionalities exhibit stronger Si-C bonds than equivalent 2D surfaces",

abstract = "Silicon nanowires (Si NWs) terminated with methyl functionalities exhibit higher oxidation resistance under ambient conditions than equivalent 2D Si(100) and 2D Si(111) surfaces having similar or 10-20% higher initial coverage. The kinetics of methyl adsorption as well as complementary surface analysis by XPS and ToF SIMS attribute this difference to the formation of stronger Si-C bonds on Si NWs, as compared to 2D Si surfaces. This finding offers the possibility of functionalising Si NWs with minimum effect on the conductance of the near-gap channels leading towards more efficient Si NW electronic devices.",

author = "Bashouti, {Muhammad Y.} and Yair Paska and Puniredd, {Sreenivasa Reddy} and Thomas Stelzner and Silke Christiansen and Hossam Haick",

year = "2009",

month = may,

day = "25",

doi = "10.1039/b820559k",

language = "English",

volume = "11",

pages = "3845--3848",

journal = "Physical Chemistry Chemical Physics",

issn = "1463-9076",

publisher = "Royal Society of Chemistry",

number = "20",

}

TY - JOUR

T1 - Silicon nanowires terminated with methyl functionalities exhibit stronger Si-C bonds than equivalent 2D surfaces

AU - Bashouti, Muhammad Y.

AU - Paska, Yair

AU - Puniredd, Sreenivasa Reddy

AU - Stelzner, Thomas

AU - Christiansen, Silke

AU - Haick, Hossam

PY - 2009/5/25

Y1 - 2009/5/25

N2 - Silicon nanowires (Si NWs) terminated with methyl functionalities exhibit higher oxidation resistance under ambient conditions than equivalent 2D Si(100) and 2D Si(111) surfaces having similar or 10-20% higher initial coverage. The kinetics of methyl adsorption as well as complementary surface analysis by XPS and ToF SIMS attribute this difference to the formation of stronger Si-C bonds on Si NWs, as compared to 2D Si surfaces. This finding offers the possibility of functionalising Si NWs with minimum effect on the conductance of the near-gap channels leading towards more efficient Si NW electronic devices.

AB - Silicon nanowires (Si NWs) terminated with methyl functionalities exhibit higher oxidation resistance under ambient conditions than equivalent 2D Si(100) and 2D Si(111) surfaces having similar or 10-20% higher initial coverage. The kinetics of methyl adsorption as well as complementary surface analysis by XPS and ToF SIMS attribute this difference to the formation of stronger Si-C bonds on Si NWs, as compared to 2D Si surfaces. This finding offers the possibility of functionalising Si NWs with minimum effect on the conductance of the near-gap channels leading towards more efficient Si NW electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=65649112389&partnerID=8YFLogxK

U2 - 10.1039/b820559k

DO - 10.1039/b820559k

M3 - Article

C2 - 19440610

AN - SCOPUS:65649112389

SN - 1463-9076

VL - 11

SP - 3845

EP - 3848

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

IS - 20

ER -

Silicon nanowires terminated with methyl functionalities exhibit stronger Si-C bonds than equivalent 2D surfaces

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