A novel multi-terminal silicon light emitting device (TRANSLED) is described where both the light intensity and spatial light pattern of the device are controlled by an insulated MOS gate voltage. This presents a major advantage over two terminals Si-LEDs, which require direct modulation of the relatively high avalanche current. It is found that, depending on the bias conditions, the light intensity is either a linear or a quadratic function of the applied gate voltage. The nonlinear relationship facilitates new applications such as the mixing of electrical input signals and modulating the optical output signal, which cannot readily be achieved with two terminal Si-LEDs, since they exhibit a linear relationship between diode avalanche current and light intensity. Furthermore, the control gate voltage can also modulate the emission pattern of the light emitting regions, for example, changing the TRANSLED from an optical line source to two point sources.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering