Single event hard errors in SRAM under heavy ion irradiation

Avner Haran; Joseph Barak; David David; Eitan Keren; Nati Refaeli; Shimshon Rapaport

doi:10.1109/TNS.2014.2345697

Single event hard errors in SRAM under heavy ion irradiation

Avner Haran, Joseph Barak, David David, Eitan Keren, Nati Refaeli, Shimshon Rapaport

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Single-event Hard Errors (SHEs) due to heavy ion irradiation were detected in a SRAM and their cross section was measured. Possible mechanisms for SHE are discussed. The results indicate that SHE in SRAMs is correlated with two processes: microdose effect and formation of a conductive path through the gate oxide. The annealing of SHE is also investigated and discussed.

Original language	English
Article number	2345697
Pages (from-to)	2702-2710
Number of pages	9
Journal	IEEE Transactions on Nuclear Science
Volume	61
Issue number	5
DOIs	https://doi.org/10.1109/TNS.2014.2345697
State	Published - 1 Oct 2014
Externally published	Yes

Keywords

Angular dependence
Charge yield
Microdose
Radiation induced leakage current (RILC)
Single-event hard error (SHE)
Soft breakdown (SBD)
Stuck bits

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2014.2345697

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title = "Single event hard errors in SRAM under heavy ion irradiation",

abstract = "Single-event Hard Errors (SHEs) due to heavy ion irradiation were detected in a SRAM and their cross section was measured. Possible mechanisms for SHE are discussed. The results indicate that SHE in SRAMs is correlated with two processes: microdose effect and formation of a conductive path through the gate oxide. The annealing of SHE is also investigated and discussed.",

keywords = "Angular dependence, Charge yield, Microdose, Radiation induced leakage current (RILC), Single-event hard error (SHE), Soft breakdown (SBD), Stuck bits",

author = "Avner Haran and Joseph Barak and David David and Eitan Keren and Nati Refaeli and Shimshon Rapaport",

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AU - Haran, Avner

AU - Barak, Joseph

AU - David, David

AU - Keren, Eitan

AU - Refaeli, Nati

AU - Rapaport, Shimshon

PY - 2014/10/1

Y1 - 2014/10/1

N2 - Single-event Hard Errors (SHEs) due to heavy ion irradiation were detected in a SRAM and their cross section was measured. Possible mechanisms for SHE are discussed. The results indicate that SHE in SRAMs is correlated with two processes: microdose effect and formation of a conductive path through the gate oxide. The annealing of SHE is also investigated and discussed.

AB - Single-event Hard Errors (SHEs) due to heavy ion irradiation were detected in a SRAM and their cross section was measured. Possible mechanisms for SHE are discussed. The results indicate that SHE in SRAMs is correlated with two processes: microdose effect and formation of a conductive path through the gate oxide. The annealing of SHE is also investigated and discussed.

KW - Angular dependence

KW - Charge yield

KW - Microdose

KW - Radiation induced leakage current (RILC)

KW - Single-event hard error (SHE)

KW - Soft breakdown (SBD)

KW - Stuck bits

UR - http://www.scopus.com/inward/record.url?scp=84908077292&partnerID=8YFLogxK

U2 - 10.1109/TNS.2014.2345697

DO - 10.1109/TNS.2014.2345697

M3 - Article

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SN - 0018-9499

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EP - 2710

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 5

M1 - 2345697

ER -

Single event hard errors in SRAM under heavy ion irradiation

Abstract

Keywords

ASJC Scopus subject areas

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