Snap-shot CMOS active pixel imager for low-noise, high-speed imaging

Guang Yang, Orly Yadid-Pecht, Chris Wrigley, Bedabrata Pain

Research output: Contribution to journalConference articlepeer-review

17 Scopus citations


Design and performance of a 128×128 snap-shot imager implemented in a standard single-poly CMOS technology is presented. A new pixel design and clocking scheme allow the imager to provide high-quality images without motion artifacts at high shutter speeds (<75 μsec. exposure), with low noise (<5 e-), immeasurable image lag, and excellent blooming protection.

Original languageEnglish
Pages (from-to)45-48
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 1998
Externally publishedYes
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 6 Dec 19989 Dec 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Snap-shot CMOS active pixel imager for low-noise, high-speed imaging'. Together they form a unique fingerprint.

Cite this