Snap-shot CMOS active pixel imager for low-noise, high-speed imaging

Guang Yang; Orly Yadid-Pecht; Chris Wrigley; Bedabrata Pain

Snap-shot CMOS active pixel imager for low-noise, high-speed imaging

Guang Yang, Orly Yadid-Pecht, Chris Wrigley, Bedabrata Pain

Research output: Contribution to journal › Conference article › peer-review

17 Scopus citations

Abstract

Design and performance of a 128×128 snap-shot imager implemented in a standard single-poly CMOS technology is presented. A new pixel design and clocking scheme allow the imager to provide high-quality images without motion artifacts at high shutter speeds (<75 μsec. exposure), with low noise (<5 e^-), immeasurable image lag, and excellent blooming protection.

Original language	English
Pages (from-to)	45-48
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1 Dec 1998
Externally published	Yes
Event	Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 6 Dec 1998 → 9 Dec 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{407f51ca1e07437184ac0cc1709600e4,

title = "Snap-shot CMOS active pixel imager for low-noise, high-speed imaging",

abstract = "Design and performance of a 128×128 snap-shot imager implemented in a standard single-poly CMOS technology is presented. A new pixel design and clocking scheme allow the imager to provide high-quality images without motion artifacts at high shutter speeds (<75 μsec. exposure), with low noise (<5 e-), immeasurable image lag, and excellent blooming protection.",

author = "Guang Yang and Orly Yadid-Pecht and Chris Wrigley and Bedabrata Pain",

year = "1998",

month = dec,

day = "1",

language = "English",

pages = "45--48",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers",

note = "Proceedings of the 1998 IEEE International Electron Devices Meeting ; Conference date: 06-12-1998 Through 09-12-1998",

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TY - JOUR

T1 - Snap-shot CMOS active pixel imager for low-noise, high-speed imaging

AU - Yang, Guang

AU - Yadid-Pecht, Orly

AU - Wrigley, Chris

AU - Pain, Bedabrata

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Design and performance of a 128×128 snap-shot imager implemented in a standard single-poly CMOS technology is presented. A new pixel design and clocking scheme allow the imager to provide high-quality images without motion artifacts at high shutter speeds (<75 μsec. exposure), with low noise (<5 e-), immeasurable image lag, and excellent blooming protection.

AB - Design and performance of a 128×128 snap-shot imager implemented in a standard single-poly CMOS technology is presented. A new pixel design and clocking scheme allow the imager to provide high-quality images without motion artifacts at high shutter speeds (<75 μsec. exposure), with low noise (<5 e-), immeasurable image lag, and excellent blooming protection.

UR - http://www.scopus.com/inward/record.url?scp=0032276822&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032276822

SN - 0163-1918

SP - 45

EP - 48

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1998 IEEE International Electron Devices Meeting

Y2 - 6 December 1998 through 9 December 1998

ER -

Snap-shot CMOS active pixel imager for low-noise, high-speed imaging

Abstract

ASJC Scopus subject areas

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