Solution-processed, hybrid 2D/3D MoS2/Si heterostructures with superior junction characteristics

S. Mukherjee, S. Biswas, S. Das, S. K. Ray

Research output: Contribution to journalArticlepeer-review

49 Scopus citations


We report a theoretical and experimental investigation of the hybrid heterostructure interfaces between atomically thin MoS2 nanocrystals (NCs) on Si platform for their potential applications towards next-generation electrical and optical devices. Mie theory-based numerical analysis and COMSOL simulations based on the finite element method have been utilized to study the optical absorption characteristics and light-matter interactions in variable-sized MoS2 NCs. The size-dependent absorption characteristics and the enhancement of electric field of the heterojunction in the UV-visible spectral range agree well with the experimental results. A lithography-free, wafer-scale, 2D material on a 3D substrate hybrid vertical heterostructure has been fabricated using colloidal n-MoS2 NCs on p-Si. The fabricated p-n heterojunction exhibited excellent junction characteristics with a high rectification ratio suitable for voltage clipper and rectifier applications. The current-voltage characteristics of the devices under illumination have been performed in the temperature range of 10-300 K. The device exhibits a high photo-to-dark current ratio of ∼3 × 103 and a responsivity comparable to a commercial Si photodetector. The excellent heterojunction characteristics demonstrate the great potential of MoS2 NC-based hybrid electronic and optoelectronic devices in the near future.

Original languageEnglish
Article number135203
Issue number13
StatePublished - 27 Feb 2017
Externally publishedYes


  • 2D materials
  • COMSOL simulations
  • MoS2 nanocrystal
  • heterostructure interface

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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