Some optical properties of Cr4+-doped crystals

B. Lipavsky, Y. Kalisky, Z. Burshtein, Y. Shimony, S. Rotman

Research output: Contribution to journalConference articlepeer-review

54 Scopus citations

Abstract

We summarize briefly some of our past studies, and report of preliminary recent new results concerning the optical properties of Cr4+-doped crystals that are important for utilization as passive Q-switching devices in Nd:YAG laser systems. The host crystals involved are YAG, YSGG, GGG, LuAG and forsterite. Excited-state lifetimes of 4.0, 1.0 and 1.7 μs were measured by the Cr4+ fluorescence decay (1.3-1.7 μm) following pulsed excitation at 1064 nm in YAG, YSGG and GGG, respectively. The ground- and excited-state absorption (ESA) cross-sections at λ = 1064 nm were estimated from transmission saturation measurements. For [Cr4+,Mg2+]:YAG the respective results were σgs = (3.25 ± 0.15) × 10-18 cm2 and σes = (6.25 ± 0.5) × 10-19 cm2. In the orthorhombic forsterite, the cross-sections were polarization dependent. We got σgs < (3.3 ± 1) × 10-19 cm2 for E∥a, σgs = (23 ± 2) × 10-19 cm2 and σes = (9.0 ± 0.7) × 10-19 cm2 for E∥b, and σgs = (16 ± 1) × 10-19 cm2 and σes = (5.7 ± 0.4) × 10-19 cm2 for E∥c. Polarised ESA spectra were measured between 680 and 960 nm using the pulsed pump/probe technique. At 750 nm we got σgs = (110 ± 10) × 10-19 cm2 and σes = (25 ± 3) × 10-19 cm2 for E∥b. Passive Q-switching performance of a flashlamp-pumped Nd:YAG laser using an intracavity [Cr4+,Ca2+[:GGG sample is also demonstrated.

Original languageEnglish
Pages (from-to)117-127
Number of pages11
JournalOptical Materials
Volume13
Issue number1
DOIs
StatePublished - 1 Jan 1999
EventProceedings of the 1997 1st Spanish-Israeli Workshop on Solid State Lasers - Ein Gedi, Isr
Duration: 14 Dec 199716 Dec 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

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