Abstract
A novel experimental multiterminal silicon light emitting diode matrix is described, where both the emitted light intensity and the spatial light pattern of the device are controlled by insulated metal-oxide-semiconductor (MOS) gate voltages. It is found that the light intensity is a nonlinear quadratic function of the applied gate voltage. The nonlinear relationship enables, for example, the mixing of electrical input signals and modulation of the optical output signal, which can not readily be achieved with two terminal Si-light-emitting diodes, since they exhibit a linear relationship between diode avalanche current and light intensity.
Original language | English |
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Pages (from-to) | 768-770 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 14 |
Issue number | 6 |
DOIs | |
State | Published - 1 Jun 2002 |
Keywords
- Light-emitting diodes
- MOS devices
- Nonlinearities
- Silicon
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering