Spatial and intensity modulation of light emission from a silicon LED matrix

Monuko Du Plessis, Herzl Aharoni, Lukas W. Snyman

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


A novel experimental multiterminal silicon light emitting diode matrix is described, where both the emitted light intensity and the spatial light pattern of the device are controlled by insulated metal-oxide-semiconductor (MOS) gate voltages. It is found that the light intensity is a nonlinear quadratic function of the applied gate voltage. The nonlinear relationship enables, for example, the mixing of electrical input signals and modulation of the optical output signal, which can not readily be achieved with two terminal Si-light-emitting diodes, since they exhibit a linear relationship between diode avalanche current and light intensity.

Original languageEnglish
Pages (from-to)768-770
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number6
StatePublished - 1 Jun 2002


  • Light-emitting diodes
  • MOS devices
  • Nonlinearities
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Spatial and intensity modulation of light emission from a silicon LED matrix'. Together they form a unique fingerprint.

Cite this