Spatial and intensity modulation of light emission from silicon led matrix

M. Du Plessis, H. Aharoni, L. W. Snyman

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A novel experimental multi-terminal silicon light emitting diode matrix is described where both the emitted light intensity and the spatial light pattern of the device are controlled by insulated MOS gate voltages. It is found that the light intensity is a nonlinear quadratic function of the applied gate voltage. The non-linear relationship enables, for example, the mixing of electrical input signals and modulation of the optical output signal, which can not readily be achieved with two terminal Si-LED's, since they exhibit a linear relationship between diode avalanche current and light intensity. Furthermore, the control gate voltages also modulate the emission pattern of the LED array.

Original languageEnglish
Title of host publicationCOMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
EditorsLeonard D. Broekman, Brian F. Usher, John D. Riley
PublisherInstitute of Electrical and Electronics Engineers
Pages29-32
Number of pages4
ISBN (Electronic)0780366980
DOIs
StatePublished - 1 Jan 2000
EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia
Duration: 6 Dec 20008 Dec 2000

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume2000-January

Conference

ConferenceConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
Country/TerritoryAustralia
CityBundoora
Period6/12/008/12/00

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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