Spatial variations in luminescence and carrier relaxation in molecular beam epitaxial grown (InP)2/(GaP)2 quantum wires

Y. Tang, D. H. Rich, A. M. Moy, K. Y. Cheng

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Abstract

Phase separation in III-V semiconductors has led to a unique method for fabricating quantum wires via a strain induced lateral ordering process. Quantum wire (QWR) arrays were formed during the gas source molecular beam epitaxial (MBE) growth of (InP)2/(GaP)2 bilayer superlattices (BSLs) and were studied by time-resolved and linearly polarized cathodoluminescence. Nonlinear optical properties, such as phase-space filling effects, were observed to be indicative of the QWR nature of the samples. Samples prepared by gas source MBE were found to have a greater uniformity, smaller QWRs, and higher optical quality in comparison to those obtained by metal-organic chemical vapor deposition. Misfit dislocations also formed in one of the BSL samples, indicating a partial strain relaxation at the GaAs/InGaP and BSL/InGaP interfaces. The carrier relaxation, transport, and collection in the QWRs were studied with time-resolved cathodoluminescence.

Original languageEnglish
Pages (from-to)1034-1039
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume15
Issue number4
StatePublished - 1 Jul 1997
Externally publishedYes

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