An InGaAs/GaAs quantum well (QW) disordering technique using AlAs native oxide and thermal annealing is presented. Unlike dielectric cap disordering, the AlAs native oxide can be placed close to quantum wells allowing for a spatially selective disordering deep within multilayer structures. The QW energy shifts and spatial control of the disordering were studied with photoluminescence and cathodoluminescence. The QW energy shift of thermally disordered regions containing buried oxide layer is ∼45 meV greater than that of regions not containing buried oxide layers. The disordering transition width is estimated to be ∼1 μm.
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 24 Nov 1997|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)