Spatially selective disordering of InGaAs/GaAs quantum wells using an AlAs native oxide and thermal annealing technique

Chao Kun Lin; Xingang Zhang; P. Daniel Dapkus; Daniel H. Rich

doi:10.1063/1.120261

Spatially selective disordering of InGaAs/GaAs quantum wells using an AlAs native oxide and thermal annealing technique

Chao Kun Lin, Xingang Zhang, P. Daniel Dapkus, Daniel H. Rich

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

An InGaAs/GaAs quantum well (QW) disordering technique using AlAs native oxide and thermal annealing is presented. Unlike dielectric cap disordering, the AlAs native oxide can be placed close to quantum wells allowing for a spatially selective disordering deep within multilayer structures. The QW energy shifts and spatial control of the disordering were studied with photoluminescence and cathodoluminescence. The QW energy shift of thermally disordered regions containing buried oxide layer is ∼45 meV greater than that of regions not containing buried oxide layers. The disordering transition width is estimated to be ∼1 μm.

Original language	English
Pages (from-to)	3108-3110
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	21
DOIs	https://doi.org/10.1063/1.120261
State	Published - 24 Nov 1997
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.120261

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title = "Spatially selective disordering of InGaAs/GaAs quantum wells using an AlAs native oxide and thermal annealing technique",

abstract = "An InGaAs/GaAs quantum well (QW) disordering technique using AlAs native oxide and thermal annealing is presented. Unlike dielectric cap disordering, the AlAs native oxide can be placed close to quantum wells allowing for a spatially selective disordering deep within multilayer structures. The QW energy shifts and spatial control of the disordering were studied with photoluminescence and cathodoluminescence. The QW energy shift of thermally disordered regions containing buried oxide layer is ∼45 meV greater than that of regions not containing buried oxide layers. The disordering transition width is estimated to be ∼1 μm.",

author = "Lin, {Chao Kun} and Xingang Zhang and Dapkus, {P. Daniel} and Rich, {Daniel H.}",

year = "1997",

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pages = "3108--3110",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Spatially selective disordering of InGaAs/GaAs quantum wells using an AlAs native oxide and thermal annealing technique

AU - Lin, Chao Kun

AU - Zhang, Xingang

AU - Dapkus, P. Daniel

AU - Rich, Daniel H.

PY - 1997/11/24

Y1 - 1997/11/24

N2 - An InGaAs/GaAs quantum well (QW) disordering technique using AlAs native oxide and thermal annealing is presented. Unlike dielectric cap disordering, the AlAs native oxide can be placed close to quantum wells allowing for a spatially selective disordering deep within multilayer structures. The QW energy shifts and spatial control of the disordering were studied with photoluminescence and cathodoluminescence. The QW energy shift of thermally disordered regions containing buried oxide layer is ∼45 meV greater than that of regions not containing buried oxide layers. The disordering transition width is estimated to be ∼1 μm.

AB - An InGaAs/GaAs quantum well (QW) disordering technique using AlAs native oxide and thermal annealing is presented. Unlike dielectric cap disordering, the AlAs native oxide can be placed close to quantum wells allowing for a spatially selective disordering deep within multilayer structures. The QW energy shifts and spatial control of the disordering were studied with photoluminescence and cathodoluminescence. The QW energy shift of thermally disordered regions containing buried oxide layer is ∼45 meV greater than that of regions not containing buried oxide layers. The disordering transition width is estimated to be ∼1 μm.

UR - http://www.scopus.com/inward/record.url?scp=0342938316&partnerID=8YFLogxK

U2 - 10.1063/1.120261

DO - 10.1063/1.120261

M3 - Article

AN - SCOPUS:0342938316

SN - 0003-6951

VL - 71

SP - 3108

EP - 3110

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Spatially selective disordering of InGaAs/GaAs quantum wells using an AlAs native oxide and thermal annealing technique

Abstract

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