TY - JOUR
T1 - Spectral and temporal performance enhancement in a symmetric co-planar Au–Ge/AlGaAs/Au–Ge natural superlattice-based MSM photodetector
AU - Maitra, Tamaghna
AU - Mukherjee, Sukhendu
AU - Pradhan, Anway
AU - Mukherjee, Suman
AU - Nayak, Arabinda
AU - Bhunia, Satyaban
N1 - Funding Information:
The authors thank the Department of Science and Technology, India for the financial support and Jawaharlal Nehru Centre for Advanced Scientific Research, India for facilitating the experiments at the Indian Beamline, Photon Factory. One of the authors TM would like to acknowledge UGC, Govt. of India for the financial support. The FRPDF grant provided by the Presidency University to AN is highly acknowledged.
Funding Information:
The authors thank the Department of Science and Technology, India for the financial support and Jawaharlal Nehru Centre for Advanced Scientific Research, India for facilitating the experiments at the Indian Beamline, Photon Factory. One of the authors TM would like to acknowledge UGC, Govt. of India for the financial support. The FRPDF grant provided by the Presidency University to AN is highly acknowledged.
Publisher Copyright:
© 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2022/4/1
Y1 - 2022/4/1
N2 - A comparative analysis is performed between a symmetric co-planar metal–semiconductor–metal Au–Ge/AlGaAs/Au–Ge photodetector based on naturally ordered superlattice structure in the semiconducting AlGaAs layer and the disordered AlGaAs layer as obtained by annealing the ordered sample at the order–disorder transition temperature. Before the device fabrication, the order to the disorder transition temperature of such periodic structure was determined by observing the X-ray rocking curves at different annealing temperatures and it was found to be 900 °C. The device operability of such structures was found within 400–900 nm of the electromagnetic spectrum. Under + 1 V bias, the peak responsivity, detectivity, and photosensitivity for the ordered sample were calculated to be 159.65 mA W−1, 1.22 × 1013 cmHz1/2 W−1, and 1.29 × 103 cm2 W−1, respectively, and at − 1 V bias, these values were 20.67 mA W−1, 3.1 × 1012 cmHz1/2 W−1, and 165.35 cm2 W−1, respectively in the presence of illumination of wavelength 750 nm at a fixed optical power. Whereas the device having homogeneous composition showed poor responsivity, detectivity, and photosensitivity of 22.58 mA W−1, 1.13 × 1012 cmHz1/2 W−1, and 45.15 cm2 W−1, respectively at + 1 V and at − 1 V these values were 10.37 mA W−1, 1.04 × 1012 cmHz1/2 W−1, and 41.49 cm2 W−1, respectively being peaked at 700 nm. Furthermore, the device with natural superlattice ordering showed superior temporal response with a rise time of 357 μs and decay times of 136 μs and 1.6 ms, respectively. The improvement of the photodetector performance using superlattice structures was explained considering the ordering-induced built-in electric field at the heterointerfaces under proper biasing conditions.
AB - A comparative analysis is performed between a symmetric co-planar metal–semiconductor–metal Au–Ge/AlGaAs/Au–Ge photodetector based on naturally ordered superlattice structure in the semiconducting AlGaAs layer and the disordered AlGaAs layer as obtained by annealing the ordered sample at the order–disorder transition temperature. Before the device fabrication, the order to the disorder transition temperature of such periodic structure was determined by observing the X-ray rocking curves at different annealing temperatures and it was found to be 900 °C. The device operability of such structures was found within 400–900 nm of the electromagnetic spectrum. Under + 1 V bias, the peak responsivity, detectivity, and photosensitivity for the ordered sample were calculated to be 159.65 mA W−1, 1.22 × 1013 cmHz1/2 W−1, and 1.29 × 103 cm2 W−1, respectively, and at − 1 V bias, these values were 20.67 mA W−1, 3.1 × 1012 cmHz1/2 W−1, and 165.35 cm2 W−1, respectively in the presence of illumination of wavelength 750 nm at a fixed optical power. Whereas the device having homogeneous composition showed poor responsivity, detectivity, and photosensitivity of 22.58 mA W−1, 1.13 × 1012 cmHz1/2 W−1, and 45.15 cm2 W−1, respectively at + 1 V and at − 1 V these values were 10.37 mA W−1, 1.04 × 1012 cmHz1/2 W−1, and 41.49 cm2 W−1, respectively being peaked at 700 nm. Furthermore, the device with natural superlattice ordering showed superior temporal response with a rise time of 357 μs and decay times of 136 μs and 1.6 ms, respectively. The improvement of the photodetector performance using superlattice structures was explained considering the ordering-induced built-in electric field at the heterointerfaces under proper biasing conditions.
UR - http://www.scopus.com/inward/record.url?scp=85123083637&partnerID=8YFLogxK
U2 - 10.1007/s10854-022-07720-0
DO - 10.1007/s10854-022-07720-0
M3 - Article
AN - SCOPUS:85123083637
VL - 33
SP - 9690
EP - 9699
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 12
ER -