Stability of Schottky contacts with Ta-Si-N amorphous diffusion barriers and Au overlayers on 6H-SiC

I. Shalish; Yoram Shapira

doi:10.1116/1.1290368

Stability of Schottky contacts with Ta-Si-N amorphous diffusion barriers and Au overlayers on 6H-SiC

I. Shalish, Yoram Shapira

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Two sputter-deposited Schottky contact metallizations are investigated using depth profiling by backscattering spectrometry and secondary ion mass spectrometry as well as current-voltage measurements. The thermal stability of the metallizations incorporating Ta-Si-N amorphous diffusion barriers and Au overlayers is analyzed. Results show that the Schottky barrier height changes from 0.71 to 0.62 eV upon annealing of 〈6H-SiC〉/TaSi₂/Ta₂₀Si₄₀N₄₀/Au metallization.

Original language	English
Pages (from-to)	2477-2481
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	5
DOIs	https://doi.org/10.1116/1.1290368
State	Published - 1 Sep 2000
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Stability of Schottky contacts with Ta-Si-N amorphous diffusion barriers and Au overlayers on 6H-SiC",

abstract = "Two sputter-deposited Schottky contact metallizations are investigated using depth profiling by backscattering spectrometry and secondary ion mass spectrometry as well as current-voltage measurements. The thermal stability of the metallizations incorporating Ta-Si-N amorphous diffusion barriers and Au overlayers is analyzed. Results show that the Schottky barrier height changes from 0.71 to 0.62 eV upon annealing of 〈6H-SiC〉/TaSi2/Ta20Si40N40/Au metallization.",

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AU - Shalish, I.

AU - Shapira, Yoram

PY - 2000/9/1

Y1 - 2000/9/1

N2 - Two sputter-deposited Schottky contact metallizations are investigated using depth profiling by backscattering spectrometry and secondary ion mass spectrometry as well as current-voltage measurements. The thermal stability of the metallizations incorporating Ta-Si-N amorphous diffusion barriers and Au overlayers is analyzed. Results show that the Schottky barrier height changes from 0.71 to 0.62 eV upon annealing of 〈6H-SiC〉/TaSi2/Ta20Si40N40/Au metallization.

AB - Two sputter-deposited Schottky contact metallizations are investigated using depth profiling by backscattering spectrometry and secondary ion mass spectrometry as well as current-voltage measurements. The thermal stability of the metallizations incorporating Ta-Si-N amorphous diffusion barriers and Au overlayers is analyzed. Results show that the Schottky barrier height changes from 0.71 to 0.62 eV upon annealing of 〈6H-SiC〉/TaSi2/Ta20Si40N40/Au metallization.

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ER -

Stability of Schottky contacts with Ta-Si-N amorphous diffusion barriers and Au overlayers on 6H-SiC

Abstract

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