Two sputter-deposited Schottky contact metallizations are investigated using depth profiling by backscattering spectrometry and secondary ion mass spectrometry as well as current-voltage measurements. The thermal stability of the metallizations incorporating Ta-Si-N amorphous diffusion barriers and Au overlayers is analyzed. Results show that the Schottky barrier height changes from 0.71 to 0.62 eV upon annealing of 〈6H-SiC〉/TaSi2/Ta20Si40N40/Au metallization.
|Number of pages
|Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
|Published - 1 Sep 2000
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering