Stacking faults in silicon epitaxial layers

Keyphrases

• Stacking Faults 100%
• Silicon Epitaxial Layers 100%
• Growth Process 40%
• Epitaxial Layers 30%
• Foreign Material 30%
• Reactor 20%
• Silicon Substrate 20%
• Crystal Orientation 10%
• Defect Formation 10%
• Optical Microscope 10%
• Layer Growth 10%
• Appropriate Treatment 10%
• Crystal Plane 10%
• Equilateral Triangle 10%
• Substrate Surface 10%
• Chemical Etching 10%
• Interface Region 10%
• Geometrical Forms 10%
• Mechanical Polishing 10%
• Substrate Layer 10%
• Epitaxial Layer Thickness 10%
• Chemical Polishing 10%
• (111) Silicon 10%

Engineering

• Epitaxial Layer 100%
• Growth Process 66%
• Surface Layer 50%
• Foreign Material 50%
• Silicon Substrate 33%
• Defects 33%
• Layer Thickness 16%
• Experimental Result 16%
• Optical Microscope 16%
• Substrate Surface 16%
• Major Part 16%
• Mechanical Polishing 16%
• Chemical Polishing 16%

Material Science

• Silicon 100%
• Epitaxial Layer 100%
• Stacking Fault 100%
• Nucleation 10%
• Polishing 10%