Stimulated emission and emission efficiency enhancement in nanopatterned silicon

  • Efraim Rotem
  • , Jeffrey M. Shainline
  • , Jimmy M. Xu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

1.278μm laser emission has been observed in a SOI structure which has been nanopatterned to contain an array of nanopores. The optical transition is identified to be associated with phononless recombination mediated by the bistable, carbon-related G center. The present work is focused on increasing the luminescence intensity from nanopatterned Si by increasing the number of G centers present in the material. The G center density is increased by increasing the concentration of substitutional atoms in the lattice prior to nanopatterning. To this end, solid-phase epitaxial regrowth of carbon-rich silicon is utilized in order to take advantage of the increased solid solubility of carbon in silicon at the interface between crystalline and amorphous solid silicon.

Original languageEnglish
Title of host publicationActive and Passive Optical Components for Communications VII
DOIs
StatePublished - 1 Dec 2007
Externally publishedYes
EventActive and Passive Optical Components for Communications VII - Boston, MA, United States
Duration: 10 Sep 200712 Sep 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6775
ISSN (Print)0277-786X

Conference

ConferenceActive and Passive Optical Components for Communications VII
Country/TerritoryUnited States
CityBoston, MA
Period10/09/0712/09/07

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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