Abstract
Structural and chemical changes in C60 thin films, grown on a Cu substrate and exposed to air or I2 atmosphere, at room temperature, were monitored by X-ray diffraction, Auger electron and X-ray photoelectron spectroscopy. Exposure to air is demonstrated to result not only in oxygen diffusion but also in a counter diffusion of the metal from the substrate into the C60 matrix. In particular, 10 months of air-exposure led to the presence of Cu and O atoms at all depths over the sample and the formation of a complex which we refer to as CuxOyC60. The new phase is quasi-stable at room temperature, but a relatively short thermal annealing at 150°C destroys it and restores the initial C60 FCC lattice. After 10 min of exposure of the Cu-supported C60 films to an I2 atmosphere the Cu sub-layer disappears completely and macroscopic amounts of a stable CuI phase are formed over the entire thickness of the C60 film. To explain the results a model of chemically-induced counter electro-diffusion is proposed. We propose the possible usefulness of this counter diffusion approach for tailoring C60 -based materials doped with various compounds in the form of both phase-separated composites and solid solutions (intercalated fullerides).
Original language | English |
---|---|
Pages (from-to) | 348-356 |
Number of pages | 9 |
Journal | Physica B: Condensed Matter |
Volume | 304 |
Issue number | 1-4 |
DOIs | |
State | Published - 1 Sep 2001 |
Keywords
- Crystal structure
- Diffusion
- Fullerene
- Phase transition
- Thin films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering