Structural and chemical modifications in Cu-supported C60 thin films exposed to an atmosphere of air or iodine

E. A. Katz, D. Faiman, S. Shtutina, N. Froumin, M. Polak, A. P. Isakina, K. A. Yagotintsev, M. A. Strzhemechny, Y. M. Strzhemechny, V. V. Zaitsev, S. A. Schwarz

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Structural and chemical changes in C60 thin films, grown on a Cu substrate and exposed to air or I2 atmosphere, at room temperature, were monitored by X-ray diffraction, Auger electron and X-ray photoelectron spectroscopy. Exposure to air is demonstrated to result not only in oxygen diffusion but also in a counter diffusion of the metal from the substrate into the C60 matrix. In particular, 10 months of air-exposure led to the presence of Cu and O atoms at all depths over the sample and the formation of a complex which we refer to as CuxOyC60. The new phase is quasi-stable at room temperature, but a relatively short thermal annealing at 150°C destroys it and restores the initial C60 FCC lattice. After 10 min of exposure of the Cu-supported C60 films to an I2 atmosphere the Cu sub-layer disappears completely and macroscopic amounts of a stable CuI phase are formed over the entire thickness of the C60 film. To explain the results a model of chemically-induced counter electro-diffusion is proposed. We propose the possible usefulness of this counter diffusion approach for tailoring C60 -based materials doped with various compounds in the form of both phase-separated composites and solid solutions (intercalated fullerides).

Original languageEnglish
Pages (from-to)348-356
Number of pages9
JournalPhysica B: Condensed Matter
Volume304
Issue number1-4
DOIs
StatePublished - 1 Sep 2001

Keywords

  • Crystal structure
  • Diffusion
  • Fullerene
  • Phase transition
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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