Structural and electrical characterization of SiO2 /MgO (001) barriers on Si for a magnetic transistor

A. Kohn; A. Kovács; T. Uhrmann; T. Dimopoulos; H. Brückl

doi:10.1063/1.3182732

Structural and electrical characterization of SiO₂ /MgO (001) barriers on Si for a magnetic transistor

A. Kohn, A. Kovács, T. Uhrmann, T. Dimopoulos, H. Brückl

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We report a structural and electrical study of sputter-deposited SiO ₂ /MgO barriers for developing magnetic Si-based transistors. We propose that SiO₂ /MgO tunneling barriers may utilize spin-filtering by achieving crystalline MgO (001) while reducing spin-scattering due to the Si/ SiO₂ interface. We find that MgO (<3 nm thick) crystallizes with (001) preferred orientation on thermally oxidized Si (<2 nm). Typical processing temperatures do not cause significant intermixing with SiO ₂ or ferromagnetic electrode. Conversely, MgO on Si is amorphous up to 2 nm thick. Capacitance-voltage characteristics of MgO capacitors are influenced significantly by the density of interface-states, as high as 5× 1013 cm^-2 eV^-1 while Si/ SiO₂ /MgO structures are electrically beneficial by reducing to 6× 1012 cm^-2 eV ^-1.

Original language	English
Article number	042506
Journal	Applied Physics Letters
Volume	95
Issue number	4
DOIs	https://doi.org/10.1063/1.3182732
State	Published - 11 Aug 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Structural and electrical characterization of SiO2 /MgO (001) barriers on Si for a magnetic transistor",

abstract = "We report a structural and electrical study of sputter-deposited SiO 2 /MgO barriers for developing magnetic Si-based transistors. We propose that SiO2 /MgO tunneling barriers may utilize spin-filtering by achieving crystalline MgO (001) while reducing spin-scattering due to the Si/ SiO2 interface. We find that MgO (<3 nm thick) crystallizes with (001) preferred orientation on thermally oxidized Si (<2 nm). Typical processing temperatures do not cause significant intermixing with SiO 2 or ferromagnetic electrode. Conversely, MgO on Si is amorphous up to 2 nm thick. Capacitance-voltage characteristics of MgO capacitors are influenced significantly by the density of interface-states, as high as 5× 1013 cm-2 eV-1 while Si/ SiO2 /MgO structures are electrically beneficial by reducing to 6× 1012 cm-2 eV -1.",

author = "A. Kohn and A. Kov{\'a}cs and T. Uhrmann and T. Dimopoulos and H. Br{\"u}ckl",

note = "Funding Information: We acknowledge support from the European Union EMAC-project, Strep 017412. A.K. is supported under the Royal Academy of Engineering/EPSRC Research Fellowship scheme. We thank D. Kirk and V. K. Lazarov for helpful discussions and technical assistance.",

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doi = "10.1063/1.3182732",

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T1 - Structural and electrical characterization of SiO2 /MgO (001) barriers on Si for a magnetic transistor

AU - Kohn, A.

AU - Kovács, A.

AU - Uhrmann, T.

AU - Dimopoulos, T.

AU - Brückl, H.

N1 - Funding Information: We acknowledge support from the European Union EMAC-project, Strep 017412. A.K. is supported under the Royal Academy of Engineering/EPSRC Research Fellowship scheme. We thank D. Kirk and V. K. Lazarov for helpful discussions and technical assistance.

PY - 2009/8/11

Y1 - 2009/8/11

N2 - We report a structural and electrical study of sputter-deposited SiO 2 /MgO barriers for developing magnetic Si-based transistors. We propose that SiO2 /MgO tunneling barriers may utilize spin-filtering by achieving crystalline MgO (001) while reducing spin-scattering due to the Si/ SiO2 interface. We find that MgO (<3 nm thick) crystallizes with (001) preferred orientation on thermally oxidized Si (<2 nm). Typical processing temperatures do not cause significant intermixing with SiO 2 or ferromagnetic electrode. Conversely, MgO on Si is amorphous up to 2 nm thick. Capacitance-voltage characteristics of MgO capacitors are influenced significantly by the density of interface-states, as high as 5× 1013 cm-2 eV-1 while Si/ SiO2 /MgO structures are electrically beneficial by reducing to 6× 1012 cm-2 eV -1.

AB - We report a structural and electrical study of sputter-deposited SiO 2 /MgO barriers for developing magnetic Si-based transistors. We propose that SiO2 /MgO tunneling barriers may utilize spin-filtering by achieving crystalline MgO (001) while reducing spin-scattering due to the Si/ SiO2 interface. We find that MgO (<3 nm thick) crystallizes with (001) preferred orientation on thermally oxidized Si (<2 nm). Typical processing temperatures do not cause significant intermixing with SiO 2 or ferromagnetic electrode. Conversely, MgO on Si is amorphous up to 2 nm thick. Capacitance-voltage characteristics of MgO capacitors are influenced significantly by the density of interface-states, as high as 5× 1013 cm-2 eV-1 while Si/ SiO2 /MgO structures are electrically beneficial by reducing to 6× 1012 cm-2 eV -1.

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DO - 10.1063/1.3182732

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VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042506

ER -

Structural and electrical characterization of SiO₂ /MgO (001) barriers on Si for a magnetic transistor

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