Structural and electrophysical properties of femtosecond laser exposed hydrogenated amorphous silicon films

Andrey V. Emelyanov, Mark V. Khenkin, Andrey G. Kazanskii, Pavel A. Forsh, Pavel K. Kashkarov, Evgeny V. Lyubin, Andrey A. Khomich, Mindaugas Gecevicius, Martynas Beresna, Peter G. Kazansky

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations


This paper studies the effect of femtosecond laser treatment in air of hydrogenated amorphous silicon thin films (a-Si:H) on their structural, electrical and photoelectric properties. The possibility of laser-induced crystallization of a-Si:H films with controlled crystalline volume fraction was shown. A sufficient increase of dark conductivity was observed for laser treated a-Si:H films which crystallinity exceeds 7%. Such increase was attributed to change in conductivity mechanism. However, spectral dependences of absorption coefficient did not show any qualitative changes with the laser fluence increase. It was found that spallation and oxidation of the film took place when laser fluence became reasonably high.

Original languageEnglish
Title of host publicationPhotonics for Solar Energy Systems IV
StatePublished - 12 Jun 2012
Externally publishedYes
EventPhotonics for Solar Energy Systems IV - Brussels, Belgium
Duration: 16 Apr 201218 Apr 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferencePhotonics for Solar Energy Systems IV


  • Amorphous silicon
  • Femtosecond laser crystallization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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