Structural and optical behavior of strained InAs quantum boxes grown on planar and patterned GaAs (100) substrates by molecular-beam epitaxy

Qianghua Xie, A. Konkar, A. Kalburge, T. R. Ramachandran, P. Chen, R. Cartland, A. Madhukar, H. T. Lin, D. H. Rich

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations

Abstract

Strained, coherent InAs islands were grown on GaAs (100) planar substrates by molecular-beam epitaxy (MBE). These coherent islands were buried under GaAs cap layers grown by MBE and migration enhanced epitaxy at low temperature (approx. 400 °C), the latter case exhibiting an order of magnitude stronger photoluminescence (PL). The PL and PL excitation spectra reveal the discrete nature of the density of states of three-dimensionally confined electronic states in the islands. The possibility of placing InAs on a regular array of prepatterned square mesas, size-reduced via buffer layer growth to a ≤150 nm mesa top, was explored. The InAs on mesas with sub-100 nm lateral dimensions is found to have an enhanced critical thickness for two-dimensional to three-dimensional island morphology transition, going from approx.1.8 monolayers (ML) for growth on planar substrate to ≥5 ML for 70 nm mesas. Spectrally and spatially resolved cathodoluminescence studies show these InAs volumes to be optically active.

Original languageEnglish
Pages (from-to)642-645
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume13
Issue number2
DOIs
StatePublished - 1 Mar 1995
Externally publishedYes
EventProceedings of the 14th North American Conference on Molecular-Beam Epitaxy - Urbana, IL, USA
Duration: 10 Oct 199412 Oct 1994

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