Structural and optical behavior of strained InAs quantum boxes grown on planar and patterned GaAs (100) substrates by molecular-beam epitaxy

Keyphrases

• Molecular Beam Epitaxy 100%
• GaAs(100) 100%
• Structural Behavior 100%
• Optical Behavior 100%
• Quantum Box 100%
• Photoluminescence 66%
• Planar Substrate 66%
• Two Dimensional 33%
• Photoluminescence Spectra 33%
• Order of Magnitude 33%
• Low Temperature 33%
• Size Reduction 33%
• Gallium Arsenide 33%
• Layer Growth 33%
• Electronic States 33%
• Cathodoluminescence 33%
• Density of States 33%
• Lateral Dimension 33%
• Spatially Resolved 33%
• Capping Layer 33%
• Buffer Layer 33%
• Island Morphology 33%
• Optically Active 33%
• Sub-100 Nm 33%
• Regular Array 33%
• Three-dimensional Island 33%
• Migration Enhanced Epitaxy 33%
• Morphology Transition 33%

Material Science

• Photoluminescence 100%
• Gallium Arsenide 100%
• Molecular Beam Epitaxy 100%
• Monolayers 66%
• Density 33%
• Epitaxy 33%
• Cathodoluminescence 33%
• Buffer Layer 33%

Engineering

• Gallium Arsenide 100%
• Monolayer 66%
• Two Dimensional 33%
• Low-Temperature 33%
• Electronic State 33%
• Excitation Spectrum 33%
• Buffer Layer 33%
• Cap Layer 33%
• Critical Thickness 33%