Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD

J. T. Kobayashi; N. P. Kobayashi; X. Zhang; P. D. Dapkus; D. H. Rich

doi:10.1016/S0022-0248(98)00598-3

Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD

J. T. Kobayashi, N. P. Kobayashi, X. Zhang, P. D. Dapkus, D. H. Rich

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Defect formation and In segregation in InGaN/GaN quantum wells grown at various temperatures and with various well thicknesses were studied using cathodoluminescence, transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HR-TEM). In_0.16Ga_0.84N quantum wells with In compositional nonuniformity and a small number of structural defects originating at the InGaN/GaN interface showed sharp and intense InGaN emission in cathodoluminescence (CL). Increasing the In composition caused surface roughness in the InGaN layer and the formation of stacking faults/dislocations originating at InGaN/GaN interface. This resulted in a reduction of the InGaN emission peak intensity.

Original language	English
Pages (from-to)	252-257
Number of pages	6
Journal	Journal of Crystal Growth
Volume	195
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(98)00598-3
State	Published - 15 Dec 1998
Externally published	Yes

Keywords

AFM
CL
GaN
InGaN
Metalorganic chemical vapor deposition (MOCVD)
Quantum well
TEM

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(98)00598-3

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@article{aa48bc48e21845539f5dc1c52846a420,

title = "Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD",

abstract = "Defect formation and In segregation in InGaN/GaN quantum wells grown at various temperatures and with various well thicknesses were studied using cathodoluminescence, transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HR-TEM). In0.16Ga0.84N quantum wells with In compositional nonuniformity and a small number of structural defects originating at the InGaN/GaN interface showed sharp and intense InGaN emission in cathodoluminescence (CL). Increasing the In composition caused surface roughness in the InGaN layer and the formation of stacking faults/dislocations originating at InGaN/GaN interface. This resulted in a reduction of the InGaN emission peak intensity.",

keywords = "AFM, CL, GaN, InGaN, Metalorganic chemical vapor deposition (MOCVD), Quantum well, TEM",

author = "Kobayashi, {J. T.} and Kobayashi, {N. P.} and X. Zhang and Dapkus, {P. D.} and Rich, {D. H.}",

note = "Funding Information: The authors would like to thank Mr. Saitou in Philips Japan, Ltd. for X-ray measurements. The authors gratefully acknowledge the support of the Office of Naval Research and DARPA through the National Center for Integrated Photonic Technology (NCIPT) and the GaN University Consortium at UCSB.",

year = "1998",

month = dec,

day = "15",

doi = "10.1016/S0022-0248(98)00598-3",

language = "English",

volume = "195",

pages = "252--257",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD

AU - Kobayashi, J. T.

AU - Kobayashi, N. P.

AU - Zhang, X.

AU - Dapkus, P. D.

AU - Rich, D. H.

N1 - Funding Information: The authors would like to thank Mr. Saitou in Philips Japan, Ltd. for X-ray measurements. The authors gratefully acknowledge the support of the Office of Naval Research and DARPA through the National Center for Integrated Photonic Technology (NCIPT) and the GaN University Consortium at UCSB.

PY - 1998/12/15

Y1 - 1998/12/15

N2 - Defect formation and In segregation in InGaN/GaN quantum wells grown at various temperatures and with various well thicknesses were studied using cathodoluminescence, transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HR-TEM). In0.16Ga0.84N quantum wells with In compositional nonuniformity and a small number of structural defects originating at the InGaN/GaN interface showed sharp and intense InGaN emission in cathodoluminescence (CL). Increasing the In composition caused surface roughness in the InGaN layer and the formation of stacking faults/dislocations originating at InGaN/GaN interface. This resulted in a reduction of the InGaN emission peak intensity.

AB - Defect formation and In segregation in InGaN/GaN quantum wells grown at various temperatures and with various well thicknesses were studied using cathodoluminescence, transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HR-TEM). In0.16Ga0.84N quantum wells with In compositional nonuniformity and a small number of structural defects originating at the InGaN/GaN interface showed sharp and intense InGaN emission in cathodoluminescence (CL). Increasing the In composition caused surface roughness in the InGaN layer and the formation of stacking faults/dislocations originating at InGaN/GaN interface. This resulted in a reduction of the InGaN emission peak intensity.

KW - AFM

KW - CL

KW - GaN

KW - InGaN

KW - Metalorganic chemical vapor deposition (MOCVD)

KW - Quantum well

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=0032477178&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(98)00598-3

DO - 10.1016/S0022-0248(98)00598-3

M3 - Article

AN - SCOPUS:0032477178

SN - 0022-0248

VL - 195

SP - 252

EP - 257

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD

Abstract

Keywords

ASJC Scopus subject areas

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