Abstract
Defect formation and In segregation in InGaN/GaN quantum wells grown at various temperatures and with various well thicknesses were studied using cathodoluminescence, transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HR-TEM). In0.16Ga0.84N quantum wells with In compositional nonuniformity and a small number of structural defects originating at the InGaN/GaN interface showed sharp and intense InGaN emission in cathodoluminescence (CL). Increasing the In composition caused surface roughness in the InGaN layer and the formation of stacking faults/dislocations originating at InGaN/GaN interface. This resulted in a reduction of the InGaN emission peak intensity.
Original language | English |
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Pages (from-to) | 252-257 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 195 |
Issue number | 1-4 |
DOIs | |
State | Published - 15 Dec 1998 |
Externally published | Yes |
Keywords
- AFM
- CL
- GaN
- InGaN
- Metalorganic chemical vapor deposition (MOCVD)
- Quantum well
- TEM
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry