Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD

J. T. Kobayashi, N. P. Kobayashi, X. Zhang, P. D. Dapkus, D. H. Rich

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19 Scopus citations

Abstract

Defect formation and In segregation in InGaN/GaN quantum wells grown at various temperatures and with various well thicknesses were studied using cathodoluminescence, transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HR-TEM). In0.16Ga0.84N quantum wells with In compositional nonuniformity and a small number of structural defects originating at the InGaN/GaN interface showed sharp and intense InGaN emission in cathodoluminescence (CL). Increasing the In composition caused surface roughness in the InGaN layer and the formation of stacking faults/dislocations originating at InGaN/GaN interface. This resulted in a reduction of the InGaN emission peak intensity.

Original languageEnglish
Pages (from-to)252-257
Number of pages6
JournalJournal of Crystal Growth
Volume195
Issue number1-4
DOIs
StatePublished - 15 Dec 1998
Externally publishedYes

Keywords

  • AFM
  • CL
  • GaN
  • InGaN
  • Metalorganic chemical vapor deposition (MOCVD)
  • Quantum well
  • TEM

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