Structural aspects of the interface in Silicon-on-sapphire system

E. Gartstein; S. Lach; D. Mogilyanski

doi:10.1016/S0040-6090(97)01118-8

Structural aspects of the interface in Silicon-on-sapphire system

E. Gartstein, S. Lach, D. Mogilyanski

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The interface in Si-on-sapphire studied by transmission electron microscopy (TEM) and X-ray diffraction techniques showed that the complicated interfacial structure is associated with arrays of microtwins and stacking faults as well as interfacial dislocations. The networks of dislocations were found to have non-rational line directions. The elastic strain in the heterostructure is accommodated by these defects and crystallite misorientations at the interface.

Original language	English
Pages (from-to)	182-186
Number of pages	5
Journal	Thin Solid Films
Volume	319
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(97)01118-8
State	Published - 29 Apr 1998

Keywords

Microtwins
Sapphire
Silicon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(97)01118-8

Cite this

@article{12d3678330b24b9e96e571420939e4e3,

title = "Structural aspects of the interface in Silicon-on-sapphire system",

abstract = "The interface in Si-on-sapphire studied by transmission electron microscopy (TEM) and X-ray diffraction techniques showed that the complicated interfacial structure is associated with arrays of microtwins and stacking faults as well as interfacial dislocations. The networks of dislocations were found to have non-rational line directions. The elastic strain in the heterostructure is accommodated by these defects and crystallite misorientations at the interface.",

keywords = "Microtwins, Sapphire, Silicon",

author = "E. Gartstein and S. Lach and D. Mogilyanski",

year = "1998",

month = apr,

day = "29",

doi = "10.1016/S0040-6090(97)01118-8",

language = "English",

volume = "319",

pages = "182--186",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Structural aspects of the interface in Silicon-on-sapphire system

AU - Gartstein, E.

AU - Lach, S.

AU - Mogilyanski, D.

PY - 1998/4/29

Y1 - 1998/4/29

N2 - The interface in Si-on-sapphire studied by transmission electron microscopy (TEM) and X-ray diffraction techniques showed that the complicated interfacial structure is associated with arrays of microtwins and stacking faults as well as interfacial dislocations. The networks of dislocations were found to have non-rational line directions. The elastic strain in the heterostructure is accommodated by these defects and crystallite misorientations at the interface.

AB - The interface in Si-on-sapphire studied by transmission electron microscopy (TEM) and X-ray diffraction techniques showed that the complicated interfacial structure is associated with arrays of microtwins and stacking faults as well as interfacial dislocations. The networks of dislocations were found to have non-rational line directions. The elastic strain in the heterostructure is accommodated by these defects and crystallite misorientations at the interface.

KW - Microtwins

KW - Sapphire

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0347813156&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(97)01118-8

DO - 10.1016/S0040-6090(97)01118-8

M3 - Article

AN - SCOPUS:0347813156

SN - 0040-6090

VL - 319

SP - 182

EP - 186

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Structural aspects of the interface in Silicon-on-sapphire system

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this