Structural characterization and temperature dependence of tunnel magnetoresistance in epitaxial Fe/MgO/Fe junctions

S. G. Wang, R. C.C. Ward, G. X. Du, X. F. Han, C. Wang, A. Kohn

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Epitaxial Fe/MgO/Fe magnetic tunnel junctions (MTJs) were grown on MgO(001) substrates by molecular beam epitaxy. The epitaxial structure has been characterized using in-situ reflection high energy diffraction, ex-situ X-ray diffraction, and high-resolution transmission electron microscopy. The magnetic and transport properties have been investigated using vibrating sample magnetometry and physical properties measurement system. The temperature dependence of the TMR ratio, whose value rises from 170% at room temperature to 318% at 10 K, is found to be nonlinear and is fitted using a model based on the effect of magnetic disorder of the electrodes on the spin polarized tunneling.

Original languageEnglish
Pages (from-to)2562-2565
Number of pages4
JournalIEEE Transactions on Magnetics
Volume44
Issue number11 PART 2
DOIs
StatePublished - 1 Nov 2008
Externally publishedYes

Keywords

  • Magnetic disorder
  • Magnetic tunnel junctions (MTJs)
  • Molecular beam epitaxy (MBE)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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