Structural characterization of LPOMVPE grown AlAs/GaAs multilayers

D. Mogilyanski; M. Blumin; E. Gartstein; R. Opitz; R. Kohler

doi:10.1016/S0022-0248(98)01117-8

Structural characterization of LPOMVPE grown AlAs/GaAs multilayers

D. Mogilyanski, M. Blumin, E. Gartstein, R. Opitz, R. Kohler

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

The characterization of the AlAs/GaAs multilayers based on the modelling of the X-ray scattering is discussed. The structural parameters regarding the thickness of the bilayer components and the vertical and lateral variations (interface roughness) were assessed from low and high angle scan modes. The diffuse scattering analysis showed that both lateral and vertical correlation of the interface roughness develops in this LPOMVPE grown system.

Original language	English
Pages (from-to)	1070-1076
Number of pages	7
Journal	Journal of Crystal Growth
Volume	198-199
Issue number	pt 2
DOIs	https://doi.org/10.1016/S0022-0248(98)01117-8
State	Published - 1 Jan 1999
Event	Proceedings of the 1998 10th International Conference on Vapor Growth and Epitaxy and Specialist Workshops on Crystal Growth, ICVGE-10 - Jerusalem, Isr Duration: 26 Jul 1998 → 31 Jul 1998

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(98)01117-8

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abstract = "The characterization of the AlAs/GaAs multilayers based on the modelling of the X-ray scattering is discussed. The structural parameters regarding the thickness of the bilayer components and the vertical and lateral variations (interface roughness) were assessed from low and high angle scan modes. The diffuse scattering analysis showed that both lateral and vertical correlation of the interface roughness develops in this LPOMVPE grown system.",

author = "D. Mogilyanski and M. Blumin and E. Gartstein and R. Opitz and R. Kohler",

year = "1999",

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TY - JOUR

T1 - Structural characterization of LPOMVPE grown AlAs/GaAs multilayers

AU - Mogilyanski, D.

AU - Blumin, M.

AU - Gartstein, E.

AU - Opitz, R.

AU - Kohler, R.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - The characterization of the AlAs/GaAs multilayers based on the modelling of the X-ray scattering is discussed. The structural parameters regarding the thickness of the bilayer components and the vertical and lateral variations (interface roughness) were assessed from low and high angle scan modes. The diffuse scattering analysis showed that both lateral and vertical correlation of the interface roughness develops in this LPOMVPE grown system.

AB - The characterization of the AlAs/GaAs multilayers based on the modelling of the X-ray scattering is discussed. The structural parameters regarding the thickness of the bilayer components and the vertical and lateral variations (interface roughness) were assessed from low and high angle scan modes. The diffuse scattering analysis showed that both lateral and vertical correlation of the interface roughness develops in this LPOMVPE grown system.

UR - https://www.scopus.com/pages/publications/0033514570

U2 - 10.1016/S0022-0248(98)01117-8

DO - 10.1016/S0022-0248(98)01117-8

M3 - Conference article

AN - SCOPUS:0033514570

SN - 0022-0248

VL - 198-199

SP - 1070

EP - 1076

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - pt 2

T2 - Proceedings of the 1998 10th International Conference on Vapor Growth and Epitaxy and Specialist Workshops on Crystal Growth, ICVGE-10

Y2 - 26 July 1998 through 31 July 1998

ER -

Structural characterization of LPOMVPE grown AlAs/GaAs multilayers

Abstract

ASJC Scopus subject areas

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