Structural stability of In 2O 3 films as sensor materials

V. Smatko; V. Golovanov; C. C. Liu; A. Kiv; D. Fuks; I. Donchev; M. Ivanovskaya

doi:10.1007/s10854-009-9921-4

Structural stability of In ₂O ₃ films as sensor materials

V. Smatko, V. Golovanov, C. C. Liu, A. Kiv, D. Fuks, I. Donchev, M. Ivanovskaya

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A structural stability of In ₂O ₃ films in gas sensors was studied in conditions of intensive exploitation of sensor device at elevated temperatures. Structural changes of In ₂O ₃ films as well as a surface electromigration of In atoms were observed. The degradation effects are caused by simultaneous influence on In ₂O ₃ films of elevated temperatures and conditions of the working device. It was found that a structural degradation of In ₂O ₃ films in a sensor device could be suppressed using thin substrates. Fabrication of sensors with uniform In ₂O ₃ films led to improvement of their operational parameters.

Original language	English
Pages (from-to)	360-363
Number of pages	4
Journal	Journal of Materials Science: Materials in Electronics
Volume	21
Issue number	4
DOIs	https://doi.org/10.1007/s10854-009-9921-4
State	Published - 1 Apr 2010

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1007/s10854-009-9921-4

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title = "Structural stability of In 2O 3 films as sensor materials",

abstract = "A structural stability of In 2O 3 films in gas sensors was studied in conditions of intensive exploitation of sensor device at elevated temperatures. Structural changes of In 2O 3 films as well as a surface electromigration of In atoms were observed. The degradation effects are caused by simultaneous influence on In 2O 3 films of elevated temperatures and conditions of the working device. It was found that a structural degradation of In 2O 3 films in a sensor device could be suppressed using thin substrates. Fabrication of sensors with uniform In 2O 3 films led to improvement of their operational parameters.",

author = "V. Smatko and V. Golovanov and Liu, {C. C.} and A. Kiv and D. Fuks and I. Donchev and M. Ivanovskaya",

note = "Funding Information: Acknowledgment This work has been funded by the Binational Science Foundation (No. 2006056).",

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T1 - Structural stability of In 2O 3 films as sensor materials

AU - Smatko, V.

AU - Golovanov, V.

AU - Liu, C. C.

AU - Kiv, A.

AU - Fuks, D.

AU - Donchev, I.

AU - Ivanovskaya, M.

N1 - Funding Information: Acknowledgment This work has been funded by the Binational Science Foundation (No. 2006056).

PY - 2010/4/1

Y1 - 2010/4/1

N2 - A structural stability of In 2O 3 films in gas sensors was studied in conditions of intensive exploitation of sensor device at elevated temperatures. Structural changes of In 2O 3 films as well as a surface electromigration of In atoms were observed. The degradation effects are caused by simultaneous influence on In 2O 3 films of elevated temperatures and conditions of the working device. It was found that a structural degradation of In 2O 3 films in a sensor device could be suppressed using thin substrates. Fabrication of sensors with uniform In 2O 3 films led to improvement of their operational parameters.

AB - A structural stability of In 2O 3 films in gas sensors was studied in conditions of intensive exploitation of sensor device at elevated temperatures. Structural changes of In 2O 3 films as well as a surface electromigration of In atoms were observed. The degradation effects are caused by simultaneous influence on In 2O 3 films of elevated temperatures and conditions of the working device. It was found that a structural degradation of In 2O 3 films in a sensor device could be suppressed using thin substrates. Fabrication of sensors with uniform In 2O 3 films led to improvement of their operational parameters.

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JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 4

ER -

Structural stability of In ₂O ₃ films as sensor materials

Abstract

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