An integrated investigation of changes in electrophysical properties and structure of Bi//2Te//2//. //4Se//0//. //6 films obtained by discrete evaporation of a material is carried out. The structure of freshly deposited and annealed layers, the dependence of electrophysical properties (Hall coefficient, thermo-emf, concentration, and Hall mobility of current carriers) of the films on the condensation temperature is investigated. It is shown that, by means of the method of discrete evaporation of the solid solution of Bi//2Te//2//. //4Se//0//. //6 of the system Bi//2Te//3 plus Bi//2Se//3, it is possible to obtain films with a broad set of concentrations of current carriers by changing only the conditions of vapor deposition and annealing without using any alloying additives, unlike the case of the volumetric material.
|Translated title of the contribution||Structure and Electrophysical Properties of Films Based on Bismuth Telluride and Selenide.|
|Number of pages||4|
|State||Published - 1 Jan 1975|
ASJC Scopus subject areas
- Energy (miscellaneous)