STRUKTURA I ELEKTROFIZICHESKIE SVOISTVA PLENOK NA OSNOVE TELLURIDA I SELENIDA VISMUTA.

U. A. Arifov; N. I. Erzin; A. I. Kulagin; N. V. Makov; Z. M. Dashevskii; L. L. Lukashevich; Kh Kh Khafizov

STRUKTURA I ELEKTROFIZICHESKIE SVOISTVA PLENOK NA OSNOVE TELLURIDA I SELENIDA VISMUTA.

Translated title of the contribution: Structure and Electrophysical Properties of Films Based on Bismuth Telluride and Selenide.

U. A. Arifov, N. I. Erzin, A. I. Kulagin, N. V. Makov, Z. M. Dashevskii, L. L. Lukashevich, Kh Kh Khafizov

Department of Materials Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

An integrated investigation of changes in electrophysical properties and structure of Bi//2Te//2//. //4Se//0//. //6 films obtained by discrete evaporation of a material is carried out. The structure of freshly deposited and annealed layers, the dependence of electrophysical properties (Hall coefficient, thermo-emf, concentration, and Hall mobility of current carriers) of the films on the condensation temperature is investigated. It is shown that, by means of the method of discrete evaporation of the solid solution of Bi//2Te//2//. //4Se//0//. //6 of the system Bi//2Te//3 plus Bi//2Se//3, it is possible to obtain films with a broad set of concentrations of current carriers by changing only the conditions of vapor deposition and annealing without using any alloying additives, unlike the case of the volumetric material.

Translated title of the contribution	Structure and Electrophysical Properties of Films Based on Bismuth Telluride and Selenide.
Original language	Russian
Pages (from-to)	5-8
Number of pages	4
Journal	Geliotekhnika
Issue number	1
State	Published - 1 Jan 1975

ASJC Scopus subject areas

Energy (miscellaneous)

Cite this

@article{7344fc351253423ab5701feaabaf5b3c,

title = "STRUKTURA I ELEKTROFIZICHESKIE SVOISTVA PLENOK NA OSNOVE TELLURIDA I SELENIDA VISMUTA.",

abstract = "An integrated investigation of changes in electrophysical properties and structure of Bi//2Te//2//. //4Se//0//. //6 films obtained by discrete evaporation of a material is carried out. The structure of freshly deposited and annealed layers, the dependence of electrophysical properties (Hall coefficient, thermo-emf, concentration, and Hall mobility of current carriers) of the films on the condensation temperature is investigated. It is shown that, by means of the method of discrete evaporation of the solid solution of Bi//2Te//2//. //4Se//0//. //6 of the system Bi//2Te//3 plus Bi//2Se//3, it is possible to obtain films with a broad set of concentrations of current carriers by changing only the conditions of vapor deposition and annealing without using any alloying additives, unlike the case of the volumetric material.",

author = "Arifov, {U. A.} and Erzin, {N. I.} and Kulagin, {A. I.} and Makov, {N. V.} and Dashevskii, {Z. M.} and Lukashevich, {L. L.} and Khafizov, {Kh Kh}",

year = "1975",

month = jan,

day = "1",

language = "רוסית",

pages = "5--8",

journal = "Geliotekhnika",

issn = "0130-0997",

publisher = "Izdatel'stvo Fan",

number = "1",

}

TY - JOUR

T1 - STRUKTURA I ELEKTROFIZICHESKIE SVOISTVA PLENOK NA OSNOVE TELLURIDA I SELENIDA VISMUTA.

AU - Arifov, U. A.

AU - Erzin, N. I.

AU - Kulagin, A. I.

AU - Makov, N. V.

AU - Dashevskii, Z. M.

AU - Lukashevich, L. L.

AU - Khafizov, Kh Kh

PY - 1975/1/1

Y1 - 1975/1/1

N2 - An integrated investigation of changes in electrophysical properties and structure of Bi//2Te//2//. //4Se//0//. //6 films obtained by discrete evaporation of a material is carried out. The structure of freshly deposited and annealed layers, the dependence of electrophysical properties (Hall coefficient, thermo-emf, concentration, and Hall mobility of current carriers) of the films on the condensation temperature is investigated. It is shown that, by means of the method of discrete evaporation of the solid solution of Bi//2Te//2//. //4Se//0//. //6 of the system Bi//2Te//3 plus Bi//2Se//3, it is possible to obtain films with a broad set of concentrations of current carriers by changing only the conditions of vapor deposition and annealing without using any alloying additives, unlike the case of the volumetric material.

AB - An integrated investigation of changes in electrophysical properties and structure of Bi//2Te//2//. //4Se//0//. //6 films obtained by discrete evaporation of a material is carried out. The structure of freshly deposited and annealed layers, the dependence of electrophysical properties (Hall coefficient, thermo-emf, concentration, and Hall mobility of current carriers) of the films on the condensation temperature is investigated. It is shown that, by means of the method of discrete evaporation of the solid solution of Bi//2Te//2//. //4Se//0//. //6 of the system Bi//2Te//3 plus Bi//2Se//3, it is possible to obtain films with a broad set of concentrations of current carriers by changing only the conditions of vapor deposition and annealing without using any alloying additives, unlike the case of the volumetric material.

UR - http://www.scopus.com/inward/record.url?scp=0016596769&partnerID=8YFLogxK

M3 - מאמר

AN - SCOPUS:0016596769

SN - 0130-0997

SP - 5

EP - 8

JO - Geliotekhnika

JF - Geliotekhnika

IS - 1

ER -

STRUKTURA I ELEKTROFIZICHESKIE SVOISTVA PLENOK NA OSNOVE TELLURIDA I SELENIDA VISMUTA.

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this