Studies of electron trapping in ZnO semiconductor

L. Chernyak, E. Flitsiyan, M. Shatkhin, Z. Dashevsky

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

It has been recently discovered that electron injection into Phosphorus-, Lithium-, Antimony- or Nitrogen-doped ZnO semiconductor, using electron beam from a Scanning Electron Microscope, as well as a forward bias application to the p-n junction or Schottky barrier, leads to a multiple-fold increase of minority carrier diffusion length and lifetime (1-4). It has also been demonstrated that forward biasing a ZnO-based photovoltaic detector results in a several-fold responsivity enhancement due to a longer minority carrier diffusion length in the detector's p-region as a result of electron injection (5,6). The observed electron injection effects were attributed to the charging of the metastable centers associated with the above-referenced impurities.

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52
PublisherElectrochemical Society Inc.
Pages3-11
Number of pages9
Edition4
ISBN (Electronic)9781607681441
ISBN (Print)9781566777940
DOIs
StatePublished - 1 Jan 2010

Publication series

NameECS Transactions
Number4
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

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