Studies of sub-micron gold islands on silicon by STM

L. A. Gheber; G. Gorodetsky; V. Volterra

doi:10.1016/0040-6090(94)90637-8

Studies of sub-micron gold islands on silicon by STM

L. A. Gheber, G. Gorodetsky, V. Volterra

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Abstract

The formation and electrical properties of discrete islands in discontinuous Au films on Si(111) were studied with a scaning tunneling microscope (STM). Ohmic electrical contact between the STM tip and isolated gold islands was established and I-V characteristics of the AuSi junctions were measured. A typical Schottky diode behaviour with ideality factor close to 1 was observed. The STM appears to be an appropriate probe for electrical measurements of nano-scale diodes.

Original language	English
Pages (from-to)	1-3
Number of pages	3
Journal	Thin Solid Films
Volume	238
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(94)90637-8
State	Published - 15 Jan 1994

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(94)90637-8

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title = "Studies of sub-micron gold islands on silicon by STM",

abstract = "The formation and electrical properties of discrete islands in discontinuous Au films on Si(111) were studied with a scaning tunneling microscope (STM). Ohmic electrical contact between the STM tip and isolated gold islands was established and I-V characteristics of the AuSi junctions were measured. A typical Schottky diode behaviour with ideality factor close to 1 was observed. The STM appears to be an appropriate probe for electrical measurements of nano-scale diodes.",

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N2 - The formation and electrical properties of discrete islands in discontinuous Au films on Si(111) were studied with a scaning tunneling microscope (STM). Ohmic electrical contact between the STM tip and isolated gold islands was established and I-V characteristics of the AuSi junctions were measured. A typical Schottky diode behaviour with ideality factor close to 1 was observed. The STM appears to be an appropriate probe for electrical measurements of nano-scale diodes.

AB - The formation and electrical properties of discrete islands in discontinuous Au films on Si(111) were studied with a scaning tunneling microscope (STM). Ohmic electrical contact between the STM tip and isolated gold islands was established and I-V characteristics of the AuSi junctions were measured. A typical Schottky diode behaviour with ideality factor close to 1 was observed. The STM appears to be an appropriate probe for electrical measurements of nano-scale diodes.

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Studies of sub-micron gold islands on silicon by STM

Abstract

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