Studies of sub-micron gold islands on silicon by STM

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9 Scopus citations


The formation and electrical properties of discrete islands in discontinuous Au films on Si(111) were studied with a scaning tunneling microscope (STM). Ohmic electrical contact between the STM tip and isolated gold islands was established and I-V characteristics of the AuSi junctions were measured. A typical Schottky diode behaviour with ideality factor close to 1 was observed. The STM appears to be an appropriate probe for electrical measurements of nano-scale diodes.

Original languageEnglish
Pages (from-to)1-3
Number of pages3
JournalThin Solid Films
Issue number1
StatePublished - 15 Jan 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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