Abstract
ITO/InP solar cells were fabricated with ITO films deposited on Zn doped InP (100) wafers by d.c. sputtering. The optimum values of the physical constants of the ITO window layers for preparing ITO/InP solar cells were obtained. Best cells were produced for ITO layers sputtered with 7% of oxygen and the open circuit voltages and short circuit currents of the devices were in the range 0.65 - 0.70 volt and 25 - 30 mA/cm2 respectively with fill factor approximately 0.60.
| Original language | English |
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| Pages | 641-643 |
| Number of pages | 3 |
| State | Published - 1 Dec 1990 |
| Externally published | Yes |
| Event | 22nd International Conference on Solid State Devices and Materials - Sendai, Jpn Duration: 22 Aug 1990 → 24 Aug 1990 |
Conference
| Conference | 22nd International Conference on Solid State Devices and Materials |
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| City | Sendai, Jpn |
| Period | 22/08/90 → 24/08/90 |