Studies on InP based heterojunction solar cells. InP/ITO

S. Chaudhuri, S. Ghosh, A. K. Pal

Research output: Contribution to conferencePaperpeer-review

Abstract

ITO/InP solar cells were fabricated with ITO films deposited on Zn doped InP (100) wafers by d.c. sputtering. The optimum values of the physical constants of the ITO window layers for preparing ITO/InP solar cells were obtained. Best cells were produced for ITO layers sputtered with 7% of oxygen and the open circuit voltages and short circuit currents of the devices were in the range 0.65 - 0.70 volt and 25 - 30 mA/cm2 respectively with fill factor approximately 0.60.

Original languageEnglish
Pages641-643
Number of pages3
StatePublished - 1 Dec 1990
Externally publishedYes
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: 22 Aug 199024 Aug 1990

Conference

Conference22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period22/08/9024/08/90

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