Study of μm-scale spatial variations in strain of a compositionally step-graded InxGa1-xAs/GaAs(001) heterostructure

K. Rammohan; D. H. Rich; R. S. Goldman; J. Chen; H. H. Wieder; K. L. Kavanagh

doi:10.1063/1.113414

Study of μm-scale spatial variations in strain of a compositionally step-graded In_xGa_1-xAs/GaAs(001) heterostructure

K. Rammohan, D. H. Rich, R. S. Goldman, J. Chen, H. H. Wieder, K. L. Kavanagh

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The relaxation of strain in compositionally step-graded In_xGa_1-xAs layers grown on GaAs(001) has been examined with cathodoluminescence (CL) wavelength and linearly polarized imaging approaches. A polarization anisotropy in CL is found, and this correlates with spectral shifts in the peak positions of excitonic luminescence. Varying asymmetries in misfit dislocation densities from transmission electron microscopy are found to be consistent with the μm-scale spatial variations in strain that is deduced from the CL.

Original language	English
Pages (from-to)	869
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113414
State	Published - 1 Dec 1995
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.113414

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title = "Study of μm-scale spatial variations in strain of a compositionally step-graded InxGa1-xAs/GaAs(001) heterostructure",

abstract = "The relaxation of strain in compositionally step-graded InxGa1-xAs layers grown on GaAs(001) has been examined with cathodoluminescence (CL) wavelength and linearly polarized imaging approaches. A polarization anisotropy in CL is found, and this correlates with spectral shifts in the peak positions of excitonic luminescence. Varying asymmetries in misfit dislocation densities from transmission electron microscopy are found to be consistent with the μm-scale spatial variations in strain that is deduced from the CL.",

author = "K. Rammohan and Rich, {D. H.} and Goldman, {R. S.} and J. Chen and Wieder, {H. H.} and Kavanagh, {K. L.}",

year = "1995",

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T1 - Study of μm-scale spatial variations in strain of a compositionally step-graded InxGa1-xAs/GaAs(001) heterostructure

AU - Rammohan, K.

AU - Rich, D. H.

AU - Goldman, R. S.

AU - Chen, J.

AU - Wieder, H. H.

AU - Kavanagh, K. L.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - The relaxation of strain in compositionally step-graded InxGa1-xAs layers grown on GaAs(001) has been examined with cathodoluminescence (CL) wavelength and linearly polarized imaging approaches. A polarization anisotropy in CL is found, and this correlates with spectral shifts in the peak positions of excitonic luminescence. Varying asymmetries in misfit dislocation densities from transmission electron microscopy are found to be consistent with the μm-scale spatial variations in strain that is deduced from the CL.

AB - The relaxation of strain in compositionally step-graded InxGa1-xAs layers grown on GaAs(001) has been examined with cathodoluminescence (CL) wavelength and linearly polarized imaging approaches. A polarization anisotropy in CL is found, and this correlates with spectral shifts in the peak positions of excitonic luminescence. Varying asymmetries in misfit dislocation densities from transmission electron microscopy are found to be consistent with the μm-scale spatial variations in strain that is deduced from the CL.

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DO - 10.1063/1.113414

M3 - Article

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JF - Applied Physics Letters

ER -

Study of μm-scale spatial variations in strain of a compositionally step-graded In_xGa_1-xAs/GaAs(001) heterostructure

Abstract

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