Study of the Al/graphite interface

Hua Lu, Dian Hong Shen, Xin Fa Deng, Qi Kun Xue, N. Froumin, M. Polak

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Thin Al films with a thickness of 20-30nm were prepared by ultra-high vacuum deposition of Al onto a graphite surface parallel to a (0001) basal plane. The samples were annealed up to 1070K, X-ray photoelectron spectroscopy analysis has shown that for temperatures just higher than 770K, a little carbide occurs in the Al film and only an Al-C phase is present at the Al/graphite interface. After annealing at 970K, the AL4C3 phase can be observed, and the binding energy of the Al2p electrons increases continuously from 72.7 to 74.2eV with increasing temperature up to 1070K, Auger electron spectroscopy depth profiles are measured to investigate the phases existing in the Al film as well as at the Al/graphite interface. It is found that the AL4C3 phase at the interface is the final product of a series of Al carbides from the interfacial reaction between Al and graphite.

Original languageEnglish
Pages (from-to)832-835
Number of pages4
JournalChinese Physics
Issue number9
StatePublished - 1 Dec 2001


  • Aluminium
  • Graphite
  • Interface

ASJC Scopus subject areas

  • Physics and Astronomy (all)


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