Abstract
A theory is developed of diffusion impurity profiles in which an allowance is made for the mobility of impurity complexes. Analytic expressions are obtained for the impurity profiles in the consecutive diffusion case. It is shown that the main characteristic feature that results from an allowance for the strong interaction between the diffusing components is a singularity of the impurity profiles representing the front of the complex-formation reaction.
| Original language | English |
|---|---|
| Pages (from-to) | 1273-1277 |
| Number of pages | 5 |
| Journal | Soviet physics. Semiconductors |
| Volume | 17 |
| Issue number | 11 |
| State | Published - 1 Jan 1983 |
ASJC Scopus subject areas
- Engineering (all)