SURFACE DIFFUSION IMPURITY PROFILES IN SEMICONDUCTORS. I. FORMULATION OF THE PROBLEM. CONSECUTIVE DIFFUSION.

V. I. Fistul, M. I. Sinder

Research output: Contribution to journalArticlepeer-review

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Abstract

A theory is developed of diffusion impurity profiles in which an allowance is made for the mobility of impurity complexes. Analytic expressions are obtained for the impurity profiles in the consecutive diffusion case. It is shown that the main characteristic feature that results from an allowance for the strong interaction between the diffusing components is a singularity of the impurity profiles representing the front of the complex-formation reaction.

Original languageEnglish
Pages (from-to)1273-1277
Number of pages5
JournalSoviet physics. Semiconductors
Volume17
Issue number11
StatePublished - 1 Jan 1983

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