Abstract
A theory in Part I is used to calculate impurity profiles in the case of simultaneous and mutual diffusion considered in the approximation of fast formation of complexes. An allowance for the finite thickness of the reaction front is made and restrictions on the complex-formation constant k (k VM GT TH k//c//r) necessary for the appearance of a front of the complex-formation reaction are obtained (k//c//r is the critical value of the complex-formation constant found from the concentrations and diffusion coefficients of the components.
| Original language | English |
|---|---|
| Pages (from-to) | 1278-1281 |
| Number of pages | 4 |
| Journal | Soviet physics. Semiconductors |
| Volume | 17 |
| Issue number | 11 |
| State | Published - 1 Jan 1983 |
ASJC Scopus subject areas
- Engineering (all)