Surface emission and band-bending in shallow junction GaAs LEDs as affected by type of gas and pressure

S. Hava

doi:10.1117/12.968177

Surface emission and band-bending in shallow junction GaAs LEDs as affected by type of gas and pressure

S. Hava

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

The environment can affect optical and electronic properties of optoelectronic devices. Here, noticeable alterations in spectral shape and wavelength of peak emission in light emitting diodes are shown to occur with changes in environmental gas and pressure. A relationship between band bending and surface charge density is derived.

Original language	English
Pages (from-to)	70-75
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	842
DOIs	https://doi.org/10.1117/12.968177
State	Published - 1 Dec 1987

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Surface emission and band-bending in shallow junction GaAs LEDs as affected by type of gas and pressure",

abstract = "The environment can affect optical and electronic properties of optoelectronic devices. Here, noticeable alterations in spectral shape and wavelength of peak emission in light emitting diodes are shown to occur with changes in environmental gas and pressure. A relationship between band bending and surface charge density is derived.",

author = "S. Hava",

year = "1987",

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AU - Hava, S.

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DO - 10.1117/12.968177

M3 - Conference article

AN - SCOPUS:84881038722

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

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Surface emission and band-bending in shallow junction GaAs LEDs as affected by type of gas and pressure

Abstract

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