Surface photovoltage spectroscopy of an InGaAs/GaAs/AlGaAs single quantum well laser structure

N. Ashkenasy; M. Leibovitch; Yoram Shapira; Fred H. Pollak; G. T. Burnham; X. Wang

doi:10.1063/1.366807

Surface photovoltage spectroscopy of an InGaAs/GaAs/AlGaAs single quantum well laser structure

N. Ashkenasy, M. Leibovitch, Yoram Shapira, Fred H. Pollak, G. T. Burnham, X. Wang

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

An InGaAs/GaAs/AlGaAs single quantum well graded-index-of-refraction separate-confinement hetero-structure laser has been analyzed using surface photovoltage spectroscopy (SPS) in a contactless, nondestructive way at room temperature. Numerical simulation of the resulting spectrum made it possible to extract growth parameters, such as the InGaAs well width, the well and cladding compositions, as well as important electro-optic structure data of this device, including the lasing wavelength and built-in electric Held. The results highlight the power of SPS in obtaining performance parameters of actual laser devices, containing two-dimensional structures, in a contactless, nondestructive way.

Original language	English
Pages (from-to)	1146-1149
Number of pages	4
Journal	Journal of Applied Physics
Volume	83
Issue number	2
DOIs	https://doi.org/10.1063/1.366807
State	Published - 15 Jan 1998
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Surface photovoltage spectroscopy of an InGaAs/GaAs/AlGaAs single quantum well laser structure",

abstract = "An InGaAs/GaAs/AlGaAs single quantum well graded-index-of-refraction separate-confinement hetero-structure laser has been analyzed using surface photovoltage spectroscopy (SPS) in a contactless, nondestructive way at room temperature. Numerical simulation of the resulting spectrum made it possible to extract growth parameters, such as the InGaAs well width, the well and cladding compositions, as well as important electro-optic structure data of this device, including the lasing wavelength and built-in electric Held. The results highlight the power of SPS in obtaining performance parameters of actual laser devices, containing two-dimensional structures, in a contactless, nondestructive way.",

author = "N. Ashkenasy and M. Leibovitch and Yoram Shapira and Pollak, {Fred H.} and Burnham, {G. T.} and X. Wang",

year = "1998",

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AU - Ashkenasy, N.

AU - Leibovitch, M.

AU - Shapira, Yoram

AU - Pollak, Fred H.

AU - Burnham, G. T.

AU - Wang, X.

PY - 1998/1/15

Y1 - 1998/1/15

N2 - An InGaAs/GaAs/AlGaAs single quantum well graded-index-of-refraction separate-confinement hetero-structure laser has been analyzed using surface photovoltage spectroscopy (SPS) in a contactless, nondestructive way at room temperature. Numerical simulation of the resulting spectrum made it possible to extract growth parameters, such as the InGaAs well width, the well and cladding compositions, as well as important electro-optic structure data of this device, including the lasing wavelength and built-in electric Held. The results highlight the power of SPS in obtaining performance parameters of actual laser devices, containing two-dimensional structures, in a contactless, nondestructive way.

AB - An InGaAs/GaAs/AlGaAs single quantum well graded-index-of-refraction separate-confinement hetero-structure laser has been analyzed using surface photovoltage spectroscopy (SPS) in a contactless, nondestructive way at room temperature. Numerical simulation of the resulting spectrum made it possible to extract growth parameters, such as the InGaAs well width, the well and cladding compositions, as well as important electro-optic structure data of this device, including the lasing wavelength and built-in electric Held. The results highlight the power of SPS in obtaining performance parameters of actual laser devices, containing two-dimensional structures, in a contactless, nondestructive way.

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Surface photovoltage spectroscopy of an InGaAs/GaAs/AlGaAs single quantum well laser structure

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