The surface photovoltage spectroscopy of epitaxial structures for high electron mobility transistors was analyzed. The effects of the transistor top and bottom delta-doping levels, and surface charge on the spectrum features were studied using numerical simulations. It was found that devices produced on these structures showed maximum drain currents, which correlated with the δtop values calculated using the model.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)