Surface photovoltage spectroscopy of metamorphic high electron mobility transistor structures

S. Solodky; T. Baksht; A. Khramtsov; M. Leibovitch; S. Hava; Yoram Shapira

doi:10.1116/1.1787518

Surface photovoltage spectroscopy of metamorphic high electron mobility transistor structures

S. Solodky, T. Baksht, A. Khramtsov, M. Leibovitch, S. Hava, Yoram Shapira

Department of Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The epitaxial structures of InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT) were analyzed using surface photovoltage spectroscopy (SPS). The direct current (dc) measurements performed on the complete devices showed correlations between epistructure parameters and final device performance. The SPS was also used for technology evaluation from the wafer incoming inspection stage to the final device. The devices with increased positive surface charge density leads to increased I_dss and absolute value of V_T.

Original language	English
Pages (from-to)	2434-2438
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	5
DOIs	https://doi.org/10.1116/1.1787518
State	Published - 1 Sep 2004

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "The epitaxial structures of InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT) were analyzed using surface photovoltage spectroscopy (SPS). The direct current (dc) measurements performed on the complete devices showed correlations between epistructure parameters and final device performance. The SPS was also used for technology evaluation from the wafer incoming inspection stage to the final device. The devices with increased positive surface charge density leads to increased Idss and absolute value of VT.",

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AU - Hava, S.

AU - Shapira, Yoram

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AB - The epitaxial structures of InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT) were analyzed using surface photovoltage spectroscopy (SPS). The direct current (dc) measurements performed on the complete devices showed correlations between epistructure parameters and final device performance. The SPS was also used for technology evaluation from the wafer incoming inspection stage to the final device. The devices with increased positive surface charge density leads to increased Idss and absolute value of VT.

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Surface photovoltage spectroscopy of metamorphic high electron mobility transistor structures

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