Surface plasmon enhanced SWIR absorption at the ultra n-doped substrate/PbSe nanostructure layer interface

Vladimir Wittenberg, Michael Rosenblit, Gabby Sarusi

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

This work presents simulation results of the plasmon enhanced absorption that can be achieved in the short wavelength infrared (SWIR – 1200 nm to 1800 nm) spectral range at the interface between ultra-heavily doped substrates and a PbSe nanostructure non-epitaxial growth absorbing layer. The absorption enhancement simulated in this study is due to surface plasmon polariton (SPP) excitation at the interface between these ultra-heavily n-doped GaAs or GaN substrates, which are nearly semimetals to SWIR light, and an absorption layer made of PbSe nano-spheres or nano-columns. The ultra-heavily doped GaAs or GaN substrates are simulated as examples, based on the Drude-Lorentz permittivity model. In the simulation, the substrates and the absorption layer were patterned jointly to forma blazed lattice, and then were back-illuminated using SWIR with a central wavelength of 1500 nm. The maximal field enhancement achieved was 17.4 with a penetration depth of 40 nm. Thus, such architecture of an ultra-heavily doped semiconductor and infrared absorbing layer can further increase the absorption due to the plasmonic enhanced absorption effect in the SWIR spectral band without the need to use a metallic layer as in the case of visible light.

Original languageEnglish
Pages (from-to)43-49
Number of pages7
JournalInfrared Physics and Technology
Volume84
DOIs
StatePublished - 1 Aug 2017

Keywords

  • Plasmon in SWIR
  • SWIR detector
  • Surface plasmon enhanced absorption
  • Upconversion

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