Surface plasmon enhanced SWIR absorption at the ultra n-doped substrate/PbSe nanostructure layer interface

Keyphrases

• Surface Plasmon 100%
• Layer Interface 100%
• Plasmonic Enhancement 100%
• GaAs Substrate 100%
• PbSe Nanostructures 100%
• GaN Substrate 100%
• Absorption Layer 100%
• Heavily Doped 100%
• Absorbing Layer 100%
• Example-based 50%
• Plasmonics 50%
• Penetration Depth 50%
• Short-wave Infrared 50%
• Infrared Absorption 50%
• Semimetal 50%
• Spectral Range 50%
• Visible Light 50%
• Surface Plasmon Polaritons 50%
• Doped Semiconductor 50%
• Central Wavelength 50%
• Spectral Bands 50%
• Absorption Enhancement 50%
• Enhanced Absorption 50%
• PbSe 50%
• Nanospheres 50%
• Back-illuminated 50%
• Absorption Effect 50%
• Nanocolumns 50%
• Permittivity Model 50%
• Drude-Lorentz 50%
• Field Enhancement 50%
• Non-epitaxial Growth 50%
• Metallic Layer 50%

Engineering

• Nanomaterial 100%
• Surface Plasmon 100%
• Nanostructure 100%
• Layer Interface 100%
• Doped Gaas 100%
• Absorption Layer 100%
• Plasmonics 50%
• Simulation Result 50%
• Penetration Depth 50%
• Spectral Range 50%
• Field Enhancement 50%
• Spectral Band 50%
• Nanosphere 50%
• Central Wavelength 50%